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MR752

Onsemi

MR752 by Onsemi

The Onsemi MR752 is a single rectifier diode with a max output current of 6A and a max repetitive peak reverse voltage of 200V. It has an operating temperature of up to 175 °C, making it suitable for high-power applications in industries like automotive and power supplies. The diode's round disk button package style with isolated case connection ensures reliable performance in various electronic circuits.

Median Price

$2.510

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

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Freelance Electronics

USA . 2 parts In-Stock

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DF Sales Co.

USA . 541 parts In-Stock

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DF Sales Co.

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American Microsemiconductor Inc.

USA . 7 parts In-Stock

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MISTER SPROCKETS

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LIBRA Elektronik GmbH

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First Choice Components Inc.

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PAR Electronics

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Sinequanon

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Carlin Systems, Inc.

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Electronics Depot

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Sunrise Surplus Inc.

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Electronic Expediters

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J & M Industries LLC

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PC Components Company LLC

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Corohmni

South Africa . 199 parts In-Stock

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Continental Prestige Electronics

USA . 51 parts In-Stock

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Microchip USA

USA . 8,138 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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SupplyDigital Components

Austria . 4,594 parts In-Stock

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Problanco Electronics

Mexico . 3,237 parts In-Stock

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Corphita

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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UHIMA Technologies

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Overview

Enhance your electronic projects with the MR752 diode rectifier by Onsemi. Known for their high-quality components, Onsemi delivers reliable and durable products that exceed industry standards. The MR752 is perfect for a wide range of applications in electronics, providing efficient energy conversion and smooth voltage regulation. With a maximum forward voltage of 1.25V and a maximum output current of 6A, this diode offers exceptional performance and reliability. Trust Onsemi to bring value and innovation to your projects with the MR752 diode rectifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it a reliable choice for long-term use.

Config: SINGLE

Having a single configuration simplifies installation and reduces complexity in circuit design.

Package Shape: ROUND

The round shape allows for easy mounting and integration into various electronic devices.

No. of Terminals: 2

With only 2 terminals, it is easy to connect and use in circuits.

Package Style (Meter): DISK BUTTON

The disk button style is compact and space-saving, making it ideal for applications with limited space.

Maximum Operating Temperature: 175 °C

The diode can withstand high temperatures, ensuring reliable performance in diverse operating conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead finish provides good conductivity and solderability for easy and secure connections.

Terminal Position: AXIAL

The axial terminal position allows for simple and efficient placement on circuit boards.

Case Connection: ISOLATED

The isolated case connection enhances safety and prevents interference in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

The diode can withstand peak reflow temperatures for a sufficient time, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 235

The diode can endure high peak reflow temperatures, making it suitable for harsh manufacturing processes.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting alternating current (AC) to direct current (DC) in various electronic applications.

Maximum Forward Voltage (VF): 1.25 V

The low forward voltage drop ensures efficient energy conversion and minimal power loss in the circuit.

Maximum Output Current: 6 A

With a high output current rating, this diode can handle a significant amount of current, making it suitable for demanding applications.

Terminal Form: WIRE

The wire terminal form allows for easy connections and flexibility in circuit designs.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high reverse voltage rating provides protection against voltage spikes and ensures reliable operation in challenging environments.

Maximum Non Repetitive Peak Forward Current: 400 A

The diode can handle high peak forward currents, making it suitable for applications with transient current spikes.

Diode Element Material: SILICON

Silicon diodes are known for their high efficiency, low leakage current, and reliable performance in various electronic circuits.

Technical Specifications

Diodes & Rectifiers MR752 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MR752 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-121-2300, 5961011212300, 5961-01-029-4558, 5961010294558, 5961-01-139-5227, 5961011395227, 5961-01-329-3647, 5961013293647

NIIN

011212300, 010294558, 011395227, 013293647

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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