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MR751

Onsemi

MR751 by Onsemi

MR751 by Onsemi is a Schottky rectifier diode with a max output current of 6A and a max forward voltage of 1.25V. It has a max repetitive peak reverse voltage of 100V, making it suitable for applications requiring high efficiency and low power loss in electronic circuits. With its round disk button package style and isolated case connection, this diode is ideal for use in various electronic devices where space-saving and efficient power management are essential.

Median Price

$1.600

Lifecycle Status

Suppliers In-Stock

43

In-Stock Inventory

1k+

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TEDSS.com

USA . 1,275 parts In-Stock

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$1.000

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$0.520

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DF Sales Co.

USA . 294 parts In-Stock

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DF Sales Co.

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Component Electronics Inc.

Canada . 38 parts In-Stock

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American Microsemiconductor Inc.

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Bristol Electronics

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LittleDiode

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Corohmni

South Africa . 150 parts In-Stock

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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Kulean Microsystems

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Overview

Unlock the power of precision and reliability with the Onsemi MR751 diode. Crafted by a trusted manufacturer, this product is designed to exceed expectations in a wide range of applications. From automotive to industrial settings, the MR751 offers unparalleled value with its high-quality construction and advanced technology. Experience seamless performance and peace of mind knowing that you have a product that delivers exceptional results every time. Choose the MR751 for your next project and elevate your work to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring durability and reliability.

Configuration: SINGLE

Simplified design and easy to use for various applications.

Package Shape: ROUND

Compact and versatile shape for easy integration into different circuits.

Number of Terminals: 2

Simple connection setup, reducing complexity during installation.

Package Style (Meter): DISK BUTTON

Unique shape that enables easy identification and handling.

Maximum Diode Operating Temperature: 175 °C

Ensures reliable performance under normal operating conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides a stable and secure connection for optimal conductivity.

Terminal Position: AXIAL

Facilitates easy mounting and connection in a linear configuration.

Case Connection: ISOLATED

Minimizes interference and enhances safety by isolating the diode from other components.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering during assembly process.

Peak Reflow Temperature °C: 235

Optimal temperature for soldering without damaging the diode.

Diode Type: RECTIFIER DIODE

Efficiently converts AC to DC current for various electronic applications.

Maximum Forward Voltage (VF): 1.25 V

Low voltage drop for efficient power conversion.

Maximum Output Current: 6 A

Capable of handling high current loads for robust performance.

Technology: SCHOTTKY

Fast switching speed and low forward voltage drop for energy-efficient operation.

Terminal Form: WIRE

Easy to connect and suitable for various mounting configurations.

Maximum Repetitive Peak Reverse Voltage: 100 V

Suitable for applications requiring reverse voltage protection.

Maximum Non-Repetitive Peak Forward Current: 400 A

Can handle high current surges without damage.

Diode Element Material: SILICON

Durable material with high temperature tolerance for long-term performance.

Technical Specifications

Diodes & Rectifiers MR751 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MR751 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-181-1200, 5961011811200, 5961-00-222-1541, 5961002221541, 5961-01-110-3045, 5961011103045, 5961-01-248-5851, 5961012485851

NIIN

011811200, 002221541, 011103045, 012485851

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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