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MR756

Onsemi

MR756 by Onsemi

MR756 by Onsemi is a Schottky rectifier diode with a max forward voltage of 1.25V and output current of 6A. It has a max repetitive peak reverse voltage of 600V, making it ideal for high-power applications requiring efficient rectification in electronic circuits. The diode's round disk button package style and isolated case connection ensure reliable performance at temperatures up to 175 °C.

Median Price

$2.714

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

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Freelance Electronics

USA . 3 parts In-Stock

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$0.696

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Voyager Components

USA . 250 parts In-Stock

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$2.561

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$2.561

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$2.561

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$2.561

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$2.561

FDH Electronics

USA . 93 parts In-Stock

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$2.714

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$2.262

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$1.667

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$1.532

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Electro Enterprises

USA . 12 parts In-Stock

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$1.827

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American Microsemiconductor Inc.

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PAR Electronics

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Sunrise Surplus Inc.

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LittleDiode

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Tech-Mark Corp

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PC Components Company LLC

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ECAB

Sweden . 4 parts In-Stock

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Donberg Electronics Ltd

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Mil-Aero Solutions, Inc.

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Resion

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Corohmni

South Africa . 483 parts In-Stock

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Continental Prestige Electronics

USA . 154 parts In-Stock

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$1.810

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$1.050

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Microchip USA

USA . 8,942 parts In-Stock

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Component Stockers USA

USA . 678 parts In-Stock

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Metaverse IC Inc.

Canada . 66,818 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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TANS Electronics

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Overview

Unlock the potential of your electronic projects with the MR756 by Onsemi. As a leader in the industry, Onsemi delivers top-quality diodes and rectifiers that are trusted by professionals worldwide. The MR756 is a versatile component with a single configuration and a round package shape, making it perfect for a wide range of applications. With a maximum output current of 6A and a maximum repetitive peak reverse voltage of 600V, this rectifier diode offers exceptional performance and reliability. Upgrade your designs with the MR756 and experience the value and benefits that Onsemi products bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides durability and protection for the diode, ensuring a longer lifespan.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to use in various applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand heat and perform reliably in demanding environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting AC to DC voltage, making it suitable for power supply applications.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds, making this diode efficient and suitable for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high maximum repetitive peak reverse voltage ensures that the diode can handle high voltage fluctuations without damage, providing reliable performance.

Technical Specifications

Diodes & Rectifiers MR756 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MR756 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-044-9445, 5961010449445, 5961-01-570-4196, 5961015704196

NIIN

010449445, 015704196

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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