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MR754RLG

Onsemi

MR754RLG by Onsemi

MR754RLG by Onsemi is a Schottky rectifier diode with a max forward voltage of 1.25V and output current of 6A. It has a max repetitive peak reverse voltage of 400V, making it ideal for high-power applications in electronics requiring efficient power conversion. The diode's round disk button package style and isolated case connection ensure reliable performance at temperatures up to 175 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 19,000 parts In-Stock

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Vyrian

USA . 6,174 parts In-Stock

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USA . 2,425 parts In-Stock

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AZTECH Wire

Italy . 62 parts In-Stock

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$21.730

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Problanco Electronics

Mexico . 5,383 parts In-Stock

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TANS Electronics

Latvia . 5,132 parts In-Stock

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SupplyDigital Components

Austria . 4,358 parts In-Stock

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Kulean Microsystems

USA . 2,447 parts In-Stock

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Corphita

USA . 1,017 parts In-Stock

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Corohmni

South Africa . 380 parts In-Stock

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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Overview

Discover the high-quality MR754RLG diode rectifier by Onsemi, offering reliable performance and durability. As a leading manufacturer in the industry, Onsemi delivers top-notch products that cater to a wide range of applications in electronics. The MR754RLG provides customers with exceptional value, benefits, and advantages, making it the perfect choice for your project needs. Trust in Onsemi's expertise and innovation to power up your designs with this superior rectifier diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a variety of applications.

Config: SINGLE

Simplified design and ease of use for single diode applications.

Package Shape: ROUND

Space-saving design and easy to integrate into circuits.

Maximum Operating Temperature: 175 °C

Allows for reliable operation in a wide range of temperature environments.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage drop, reducing power loss and improving overall efficiency.

Maximum Output Current: 6 A

Capable of handling high current loads, suitable for a variety of power applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and lower forward voltage drop compared to standard diodes, improving performance.

Maximum Repetitive Peak Reverse Voltage: 400 V

High reverse voltage capability, making it suitable for circuits with varying voltage requirements.

Diode Element Material: SILICON

Silicon diodes offer stability, reliability, and consistent performance for a wide range of applications.

Technical Specifications

Diodes & Rectifiers MR754RLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

MR754RLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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