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MMFT2955ET1

Onsemi

MMFT2955ET1 by Onsemi

MMFT2955ET1 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1.2A, 0.3 ohm RDS(on), and operates at up to 150 °C. With GULL WING terminals and DUAL position, it's designed for surface mount in small outline packages.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 48 parts In-Stock

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$0.380

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$0.290

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$0.250

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48

$0.380

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Legend Electronics Inc.

USA . 17,000 parts In-Stock

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NexGen Digital

USA . 2,998 parts In-Stock

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Vyrian

USA . 1,837 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,545 parts In-Stock

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Digiode

USA . 1,399 parts In-Stock

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ComSIT Distribution GmbH

Germany . 875 parts In-Stock

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875

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ECAB

Sweden . 830 parts In-Stock

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830

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Contempo Components LLC

USA . 442 parts In-Stock

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442

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Bristol Electronics

USA . 396 parts In-Stock

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Dan-Mar Components

USA . 391 parts In-Stock

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391

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Prism Electronics

USA . 308 parts In-Stock

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QIE Inc.

USA . 224 parts In-Stock

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PC Components Company LLC

USA . 119 parts In-Stock

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Semi Source

USA . 91 parts In-Stock

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Electronics Depot

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Corohmni

South Africa . 373 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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TANS Electronics

Latvia . 5,660 parts In-Stock

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Kulean Microsystems

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Authorized Procurement Solutions

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Perfect Parts

USA . 2,317 parts In-Stock

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SupplyDigital Components

Austria . 2,258 parts In-Stock

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Problanco Electronics

Mexico . 1,459 parts In-Stock

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Corphita

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 955 parts In-Stock

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Overview

Unleash the power of innovation with the MMFT2955ET1 by Onsemi, a top-quality P-CHANNEL small signal Field Effect Transistor. Manufactured by Onsemi, this versatile component is perfect for switching applications, offering customers unrivaled performance and reliability. With a maximum drain current of 1.2 A and a low on-resistance of 0.3 ohm, this transistor delivers exceptional value and efficiency. Whether you're looking to enhance your electronics project or streamline your industrial processes, the MMFT2955ET1 is the perfect solution for all your needs. Trust Onsemi for cutting-edge technology and superior quality in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Offers efficient current flow and control in the desired direction.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit designs by integrating a diode, saving space and reducing component count.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required.

Surface Mount: YES

Facilitates easy and convenient PCB assembly.

Minimum DS Breakdown Voltage: 60 V

Can handle higher voltage levels without breakdown, increasing overall reliability.

Package Shape: RECTANGULAR

Allows for efficient placement on a circuit board.

Terminal Form: GULL WING

Enables secure and reliable soldering connections.

Operating Mode: ENHANCEMENT MODE

Offers precise control of the transistor's conductivity for optimal performance.

Maximum Drain Current (Abs) (ID): 1.2 A

Capable of handling high current levels for various applications.

No. of Terminals: 4

Provides necessary connection points for the transistor within a circuit.

Maximum Power Dissipation (Abs): 0.8 W

Can dissipate heat effectively to prevent overheating during operation.

Package Style (Meter): SMALL OUTLINE

Compact size allows for space-saving PCB layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high performance and efficiency in signal amplification and switching applications.

Maximum Operating Temperature: 150 °C

Capable of operating reliably at high temperatures, suitable for a range of environments.

Transistor Element Material: SILICON

Provides excellent electrical properties and reliability for the transistor.

Terminal Finish: TIN LEAD

Ensures good solderability and connection quality.

Maximum Drain-Source On Resistance: 0.3 ohm

Low on-resistance for efficient current conduction.

Terminal Position: DUAL

Allows for versatile mounting options on a PCB.

Moisture Sensitivity Level (MSL): 3

Indicates the level of protection against moisture, ensuring reliability in various conditions.

Case Connection: DRAIN

Simplifies circuit design and connection setup.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during assembly processes without damage.

Technical Specifications

Small Signal Field Effect Transistors (FET) MMFT2955ET1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

AVALANCHE RATED

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

1.2 A

Maximum Drain Current (ID):

1.2 A

Maximum Drain-Source On Resistance:

.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMFT2955ET1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-522-3896, 5961015223896

NIIN

015223896

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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