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MMFT3055VT1G

Onsemi

MMFT3055VT1G by Onsemi

MMFT3055VT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 1.7A max drain current. Operating in enhancement mode, it has a max power dissipation of 2.1W and 0.13 ohm on-resistance.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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LIBRA Elektronik GmbH

Germany . 14,138 parts In-Stock

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Digiode

USA . 1,359 parts In-Stock

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Vyrian

USA . 807 parts In-Stock

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ComSIT Distribution GmbH

Germany . 300 parts In-Stock

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300

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Benley Electronics

USA . 6 parts In-Stock

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$0.650

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Metaverse IC Inc.

Canada . 180,000 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Kulean Microsystems

USA . 6,052 parts In-Stock

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TANS Electronics

Latvia . 5,525 parts In-Stock

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Corphita

USA . 1,153 parts In-Stock

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Problanco Electronics

Mexico . 566 parts In-Stock

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UHIMA Technologies

Türkiye . 336 parts In-Stock

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SupplyDigital Components

Austria . 196 parts In-Stock

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Corohmni

South Africa . 188 parts In-Stock

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Overview

Discover the Onsemi MMFT3055VT1G, a high-quality N-CHANNEL Field Effect Transistor perfect for switching applications. With a robust design and built-in diode, this transistor offers reliable performance and enhanced efficiency. Ideal for a wide range of electronic projects, this small signal FET provides a maximum drain current of 1.7 A and a low on-resistance of 0.13 ohms. Trust in Onsemi's expertise in semiconductor technology to deliver exceptional value and performance. Upgrade your circuits with the MMFT3055VT1G and experience the benefits of superior quality and precision engineering.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and conductivity, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy and efficient switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Enables easy and convenient installation on circuit boards.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without failing.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient utilization of space on the circuit board.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and connection during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control and efficiency in switching operations.

Maximum Drain Current (Abs) (ID): 1.7 A

With a high max drain current, this transistor can handle demanding load requirements.

No. of Terminals: 4

Having 4 terminals allows for versatile connection options in the circuit.

Maximum Power Dissipation (Abs): 2.1 W

The high power dissipation capability ensures the transistor can handle power-intensive tasks.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, ideal for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance and reliability in small signal applications.

Maximum Operating Temperature: 175 °C

With a high max operating temperature, this transistor can withstand heat without compromising performance.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring stable performance.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability for reliable connections.

Maximum Drain-Source On Resistance: 0.13 ohm

Low on-resistance ensures minimal power loss and efficient operation of the transistor.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and configurations.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates that this transistor can withstand moderate humidity levels without degradation.

Case Connection: DRAIN

Drain case connection simplifies the circuit layout and makes connection easier.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering during manufacturing processes.

Maximum Feedback Capacitance (Crss): 50 pF

Low feedback capacitance ensures minimal signal distortion and good high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) MMFT3055VT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

AVALANCHE RATED

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

1.7 A

Maximum Drain Current (ID):

1.7 A

Maximum Drain-Source On Resistance:

.13 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMFT3055VT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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