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MC74VHCT50AM

Onsemi

MC74VHCT50AM by Onsemi

MC74VHCT50AM by Onsemi is a 6-function logic gate with 10.5ns propagation delay at 3.3V, suitable for military-grade applications. It features a max operating temperature of 125 °C and can handle load capacitance of 50pF. This surface-mount device has a small outline package style and operates within a supply voltage range of 2-5.5V.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,112 parts In-Stock

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Legend Electronics Inc.

USA . 1,788 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 863 parts In-Stock

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Problanco Electronics

Mexico . 4,222 parts In-Stock

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Kulean Microsystems

USA . 2,821 parts In-Stock

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TANS Electronics

Latvia . 2,801 parts In-Stock

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Corphita

USA . 1,808 parts In-Stock

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SupplyDigital Components

Austria . 608 parts In-Stock

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Microchip USA

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UHIMA Technologies

Türkiye . 254 parts In-Stock

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Corohmni

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Overview

Enhance your electronic projects with the MC74VHCT50AM logic gate by Onsemi. Known for its superior quality and reliability, Onsemi delivers cutting-edge technology in every component they produce. Ideal for a wide range of applications, this logic gate offers fast propagation delay, low power consumption, and excellent performance at both high and low temperatures. With its small outline package and dual terminal position, the MC74VHCT50AM is easy to integrate into any design. Trust Onsemi to provide you with the high-quality components you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product suitable for various environments.

Propagation Delay At Nominal Supply: 10.5 ns

Fast propagation delay ensures quick response times in signal processing, making the product efficient for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and secure installation on circuit boards, saving space and facilitating automated assembly processes.

Nominal Supply Voltage: 3.3V

Operates at a common supply voltage, making it compatible with a wide range of systems and power sources.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, ensuring reliable performance in challenging conditions.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor technology offers low power consumption and high noise immunity, making the product energy efficient and reliable.

Technical Specifications

Logic Gates MC74VHCT50AM attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHCT/VHCT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

10.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

10.5 ns

Propagation Delay (tpd):

13 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

2.05 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5.275 mm

Trade Compliance

MC74VHCT50AM Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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