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MC74VHC1GT86DBVT1G

Onsemi

MC74VHC1GT86DBVT1G by Onsemi

MC74VHC1GT86DBVT1G by Onsemi is a CMOS Logic Gate with 2 inputs, 12ns propagation delay, and 3V nominal voltage. It is used in military-grade applications due to its -55 to 125 °C operating temperature range and small outline thin profile package style.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,247 parts In-Stock

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Digiode

USA . 2,287 parts In-Stock

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Distributors (Availability)

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Component Stockers USA

USA . 361,446 parts In-Stock

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$0.410

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Ampacity Inc.

Singapore . 451 parts In-Stock

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$3.000

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AZTECH Wire

Italy . 1,095 parts In-Stock

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SupplyDigital Components

Austria . 7,616 parts In-Stock

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Problanco Electronics

Mexico . 6,695 parts In-Stock

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TANS Electronics

Latvia . 6,153 parts In-Stock

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Kulean Microsystems

USA . 4,283 parts In-Stock

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Corphita

USA . 2,384 parts In-Stock

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UHIMA Technologies

Türkiye . 823 parts In-Stock

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Corohmni

South Africa . 327 parts In-Stock

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Microchip USA

USA . 231 parts In-Stock

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Overview

Enhance your electronic designs with the MC74VHC1GT86DBVT1G by Onsemi. As a leading manufacturer of high-quality logic gates, Onsemi delivers reliable and efficient solutions for a wide range of applications. With its fast propagation delay and low power consumption, this product offers unmatched performance and value to customers. Whether you're designing consumer electronics or industrial equipment, trust Onsemi to provide cutting-edge technology that meets your needs. Elevate your projects with the MC74VHC1GT86DBVT1G and experience the difference that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability for the product.

Propagation Delay At Nominal Supply: 12 ns

Low propagation delay ensures fast processing speed in digital circuits.

Surface Mount: YES

Surface mount capability makes it easy to assemble and integrate into circuit boards.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard 3V voltage, making it compatible with many electronic devices.

Max I (ol): 8 Amp

High output current capability allows for driving larger loads in the circuit.

Temperature Grade: MILITARY

Military-grade temperature range ensures reliability in harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Logic Gates MC74VHC1GT86DBVT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

19.5 ns

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Trade Compliance

MC74VHC1GT86DBVT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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