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MC74VHC1G14EDFT2G

Onsemi

MC74VHC1G14EDFT2G by Onsemi

MC74VHC1G14EDFT2G by Onsemi is a CMOS logic gate with 13.5ns propagation delay and 3V supply voltage. It features Schmitt Trigger technology, operates in temperature range -55 to 125 °C, and is suitable for military-grade applications.

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USA . 579 parts In-Stock

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SupplyDigital Components

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Overview

Discover a world of limitless possibilities with the MC74VHC1G14EDFT2G logic gate by Onsemi. Crafted with precision and expertise, this high-quality product is designed to excel in various applications. From consumer electronics to industrial automation, this logic gate offers unparalleled performance and reliability. With a fast propagation delay and low power consumption, customers can trust in the value and benefits that this product brings to their projects. Upgrade your designs with the MC74VHC1G14EDFT2G and experience innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic package body material provides durability and protection for the internal components of the logic gate.

Propagation Delay At Nominal Supply: 13.5 ns

Low propagation delay ensures fast response times in signal processing applications, making this logic gate suitable for high-speed circuits.

Surface Mount: YES

Surface mount capability allows for easy and secure installation on PCBs, saving space and offering efficient assembly processes.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes this logic gate compatible with a wide range of electronic devices and power sources.

Load Capacitance (CL): 50 pF

Supporting a load capacitance of 50 pF enables stable operation in circuits with varying capacitance requirements.

No. of Terminals: 5

Having 5 terminals allows for versatile connectivity options in circuit designs, offering flexibility for different wiring configurations.

Maximum I (ol): 8 Amp

High output current capability of 8A ensures reliable power delivery for connected components, making this logic gate suitable for driving heavy loads.

Temperature Grade: MILITARY

Military-grade temperature tolerance allows this logic gate to operate in extreme environmental conditions, making it suitable for rugged applications.

Schmitt Trigger: YES

Incorporating a Schmitt trigger ensures noise immunity and improved signal integrity, enhancing the reliability of this logic gate in noisy environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable in various circuit applications.

Technical Specifications

Logic Gates MC74VHC1G14EDFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

13.5 ns

Propagation Delay (tpd):

20.5 ns

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

MC74VHC1G14EDFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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