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MC74VHC1G08MU1TCG

Onsemi

MC74VHC1G08MU1TCG by Onsemi

MC74VHC1G08MU1TCG by Onsemi is a logic gate with 2 inputs, 11 ns propagation delay, and 16.5 ns tpd. It operates at a voltage of 5V and has a load capacitance of 50 pF. Ideal for applications requiring fast signal processing in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,566 parts In-Stock

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Digiode

USA . 468 parts In-Stock

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468

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Component Stockers USA

USA . 99,584 parts In-Stock

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$1.180

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AZTECH Wire

Italy . 829 parts In-Stock

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$9.250

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TANS Electronics

Latvia . 4,006 parts In-Stock

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Kulean Microsystems

USA . 3,967 parts In-Stock

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Problanco Electronics

Mexico . 2,096 parts In-Stock

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SupplyDigital Components

Austria . 1,782 parts In-Stock

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Corphita

USA . 1,357 parts In-Stock

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UHIMA Technologies

Türkiye . 614 parts In-Stock

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Microchip USA

USA . 377 parts In-Stock

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Corohmni

South Africa . 279 parts In-Stock

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Overview

Discover the Onsemi MC74VHC1G08MU1TCG, a top-quality logic gate that offers reliable performance and versatility for a wide range of applications. Onsemi's commitment to excellence ensures that this product meets the highest standards in the industry, providing customers with a dependable solution for their circuit design needs. With a compact package and low power consumption, this logic gate is perfect for space-constrained designs while delivering fast propagation delays and exceptional output characteristics. Trust Onsemi to deliver superior quality and value with the MC74VHC1G08MU1TCG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Propagation Delay At Nominal Supply: 11 ns

The low propagation delay ensures fast response times, making this product suitable for high-speed applications.

Surface Mount: YES

Surface mount compatibility allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with a wide range of systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product is reliable in demanding environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the product.

Technical Specifications

Logic Gates MC74VHC1G08MU1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay At Nominal Supply:

11 ns

Propagation Delay (tpd):

16.5 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

MC74VHC1G08MU1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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