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MC10H105FNR2G

Onsemi

MC10H105FNR2G by Onsemi

MC10H105FNR2G by Onsemi is a Logic Gate with 3 functions and inputs. It has a propagation delay of 1.3 ns at -5.2V, suitable for high-speed applications in commercial electronics due to its ECL technology and operating temperature range of 0-75 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 3,668 parts In-Stock

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Digiode

USA . 2,194 parts In-Stock

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AZTECH Wire

Italy . 1,140 parts In-Stock

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Kepictronics

USA . 600,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

USA . 7,222 parts In-Stock

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TANS Electronics

Latvia . 6,193 parts In-Stock

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Problanco Electronics

Mexico . 6,039 parts In-Stock

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Microchip USA

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SupplyDigital Components

Austria . 3,109 parts In-Stock

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Corphita

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Perfect Parts

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Corohmni

South Africa . 351 parts In-Stock

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UHIMA Technologies

Türkiye . 64 parts In-Stock

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Overview

Elevate your logic gate applications with the MC10H105FNR2G by Onsemi. Crafted from high-quality plastic/epoxy materials, this chip carrier logic gate offers a swift propagation delay of 1.3 ns at -5.2V supply voltage. With 3 functions and inputs, this square-shaped package delivers reliable performance in a compact design. Whether you're designing telecommunications equipment or digital computers, this commercial extended grade logic gate is the perfect solution for your complex circuit needs. Trust Onsemi's reputation for excellence and innovation to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the logic gates, making them suitable for a wide range of environments.

Propagation Delay At Nominal Supply: 1.3 ns

The fast propagation delay of 1.3 ns ensures quick signal processing, making these logic gates ideal for applications requiring high-speed operation.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on PCBs, saving space and simplifying the manufacturing process.

No. of Functions: 3

With 3 functions in one package, these logic gates offer versatile functionality and can help reduce the overall component count in a circuit design.

No. of Inputs: 3

Having 3 inputs allows for more complex logic operations to be performed, enhancing the versatility and functionality of these logic gates.

Nominal Supply Voltage / Vsup (V): -5.2

The nominal supply voltage of -5.2V ensures compatibility with standard power supplies, making integration into a system straightforward.

Power Supplies (V): -5.2

The power supply voltage of -5.2V ensures reliable and stable operation of the logic gates within the specified voltage range.

No. of Terminals: 20

Having 20 terminals provides ample connectivity options for interfacing with other components, enabling versatile circuit designs.

Maximum Operating Temperature: 75 °C

The high maximum operating temperature of 75 °C ensures reliable performance in demanding environmental conditions.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C ensures the logic gates can function effectively in a wide range of temperature environments.

Terminal Finish: TIN

The TIN terminal finish ensures good conductivity and reliability in electrical connections, contributing to the overall performance of the logic gates.

Technology: ECL

The ECL technology utilized in these logic gates offers high-speed operation and low power consumption, making them suitable for high-performance applications.

Technical Specifications

Logic Gates MC10H105FNR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

ASYMMETRICAL INPUTS

Family:

10H

JESD-30 Code:

S-PQCC-J20

JESD-609 Code:

e3

Length:

8.965 mm

Logic IC Type:

No. of Functions:

3

No. of Inputs:

3

No. of Terminals:

20

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC20,.4SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

-5.2

Maximum Power Supply Current (ICC):

23 mA

Propagation Delay At Nominal Supply:

1.3 ns

Propagation Delay (tpd):

1.2 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

4.57 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

-5.46 V

Minimum Supply Voltage (Vsup):

-4.94 V

Nominal Supply Voltage / Vsup (V):

-5.2

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

8.965 mm

Trade Compliance

MC10H105FNR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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