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MC10H105FNG

Onsemi

MC10H105FNG by Onsemi

MC10H105FNG by Onsemi is a Logic Gate with 3 functions and inputs, featuring a propagation delay of 1.2 ns at -5.2V supply voltage. This ECL technology chip carrier has a temperature range of 0-75 °C and is ideal for high-speed applications requiring fast signal processing in commercial extended environments.

Median Price

$2.464

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 160 parts In-Stock

1+ parts

-

100+ parts

$2.190

1k+ parts

$1.960

10k+ parts

$1.850

160

-

$2.190

$1.960

$1.850

Verical

USA . 160 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.737

10k+ parts

-

160

-

-

$2.737

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 141 parts In-Stock

1+ parts

$2.328

100+ parts

-

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-

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-

141

$2.328

-

-

-

Vyrian

USA . 8,196 parts In-Stock

1+ parts

-

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8,196

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Benley Electronics

USA . 11 parts In-Stock

1+ parts

$0.750

100+ parts

-

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11

$0.750

-

-

-

Corphita

USA . 1,385 parts In-Stock

1+ parts

$2.205

100+ parts

-

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1,385

$2.205

-

-

-

Corohmni

South Africa . 370 parts In-Stock

1+ parts

$2.450

100+ parts

-

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370

$2.450

-

-

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AZTECH Wire

Italy . 379 parts In-Stock

1+ parts

$19.960

100+ parts

-

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379

$19.960

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QUARKTWIN TECHNOLOGY LTD

USA . 9,702 parts In-Stock

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9,702

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SupplyDigital Components

Austria . 7,337 parts In-Stock

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7,337

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Kulean Microsystems

USA . 4,737 parts In-Stock

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4,737

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Microchip USA

USA . 3,716 parts In-Stock

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3,716

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Problanco Electronics

Mexico . 3,014 parts In-Stock

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3,014

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TANS Electronics

Latvia . 2,017 parts In-Stock

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2,017

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UHIMA Technologies

Türkiye . 563 parts In-Stock

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563

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Continental Prestige Electronics

USA . 165 parts In-Stock

1+ parts

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100+ parts

$2.120

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165

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$2.120

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Overview

Enhance your electronic design projects with the MC10H105FNG logic gates by Onsemi. Crafted with precision and quality, Onsemi is known for delivering reliable components that exceed industry standards. Ideal for a wide range of applications, these logic gates offer fast propagation delay, low power consumption, and high performance. With Onsemi's MC10H105FNG, you can trust in superior functionality and efficiency, making it the perfect choice for your next project. Elevate your designs with Onsemi's cutting-edge technology and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the logic gates, ensuring longevity and reliability.

Propagation Delay At Nominal Supply: 1.3 ns

The fast propagation delay ensures quick response times, making this product suitable for high-speed applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving space and simplifying the manufacturing process.

No. of Functions: 3

Having multiple functions in one package increases the versatility and functionality of the logic gates, making them cost-effective for various applications.

Nominal Supply Voltage / Vsup (V): -5.2

The specified supply voltage ensures proper operation and compatibility with other components in the circuit.

Maximum Operating Temperature: 75 °C

The high maximum operating temperature tolerance allows the logic gates to operate reliably in a wide range of environmental conditions.

Minimum Supply Voltage (Vsup): -4.94 V

The specified minimum supply voltage ensures that the logic gates can still function within safe limits even under low voltage conditions.

Technical Specifications

Logic Gates MC10H105FNG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

ASYMMETRICAL INPUTS

Family:

10H

JESD-30 Code:

S-PQCC-J20

JESD-609 Code:

e3

Length:

8.965 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

3

No. of Functions:

3

No. of Inputs:

3

No. of Terminals:

20

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC20,.4SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Power Supplies (V):

-5.2

Maximum Power Supply Current (ICC):

23 mA

Propagation Delay At Nominal Supply:

1.3 ns

Propagation Delay (tpd):

1.2 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

4.57 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

-5.46 V

Minimum Supply Voltage (Vsup):

-4.94 V

Nominal Supply Voltage / Vsup (V):

-5.2

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8.965 mm

Trade Compliance

MC10H105FNG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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