Loading...

MC10EP101MNR4G

Onsemi

MC10EP101MNR4G by Onsemi

MC10EP101MNR4G by Onsemi is a Logic Gates chip with 4 functions and inputs. It has a fast propagation delay of 0.37 ns at 3.3V, suitable for industrial applications requiring high-speed signal processing in a compact square package. With ECL technology, it operates b/w -40 to 85 °C and supports surface mount installation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,901 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,901

-

-

-

-

Digiode

USA . 1,969 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,969

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 207 parts In-Stock

1+ parts

$20.260

100+ parts

-

1k+ parts

-

10k+ parts

-

207

$20.260

-

-

-

TANS Electronics

Latvia . 4,128 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,128

-

-

-

-

Kulean Microsystems

USA . 3,835 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,835

-

-

-

-

SupplyDigital Components

Austria . 2,423 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,423

-

-

-

-

Corphita

USA . 2,316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,316

-

-

-

-

UHIMA Technologies

Türkiye . 633 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

633

-

-

-

-

Problanco Electronics

Mexico . 379 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

379

-

-

-

-

Corohmni

South Africa . 302 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

302

-

-

-

-

Microchip USA

USA . 240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

240

-

-

-

-

Overview

Experience the unbeatable quality of Onsemi with the MC10EP101MNR4G Logic Gates. With a fast propagation delay of just 0.42 ns, this product is perfect for high-speed applications. Built with precision and reliability in mind, Onsemi guarantees top-notch performance and durability. Whether you're working on telecommunications, data communications, or industrial applications, this logic gate will provide you with the efficiency and accuracy you need. Trust Onsemi to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the MC10EP101MNR4G Logic Gates today.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 0.42 ns

A fast propagation delay ensures quick response times, making this product suitable for high-speed applications.

Surface Mount: YES

Surface mount packaging allows for easy and efficient assembly onto circuit boards.

No. of Functions: 4

Having multiple functions in one component saves space and simplifies circuit design.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a commonly used supply voltage, making it compatible with many systems.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for use in industrial environments.

Technology: ECL

Emitter-Coupled Logic technology offers high-speed performance and low power consumption.

Technical Specifications

Logic Gates MC10EP101MNR4G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -3V TO -5.5V

Family:

10E

JESD-30 Code:

S-XQCC-N32

JESD-609 Code:

e3

Length:

5 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

4

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

-5.2

Maximum Power Supply Current (ICC):

75 mA

Propagation Delay At Nominal Supply:

.42 ns

Propagation Delay (tpd):

.37 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

MC10EP101MNR4G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20