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M74VHC1GT14DFT2G

Onsemi

M74VHC1GT14DFT2G by Onsemi

M74VHC1GT14DFT2G by Onsemi is a CMOS logic gate with Schmitt Trigger feature. It operates at 3.3/5V, has 5 terminals, and a propagation delay of 20.5ns. Ideal for military-grade applications requiring fast response time in a compact package.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Chip Stock

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Bristol Electronics

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Microchip USA

USA . 481 parts In-Stock

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Semicontronic

India . 1,606 parts In-Stock

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AZTECH Wire

Italy . 660 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,511 parts In-Stock

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Ampacity Inc.

Singapore . 701 parts In-Stock

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Overview

Discover the M74VHC1GT14DFT2G by Onsemi, a high-quality logic gate that offers precision and reliability for your electronic projects. With Onsemi's reputation for excellence in manufacturing, this product is guaranteed to meet your expectations. Ideal for a wide range of applications, this logic gate provides seamless integration and efficient performance. Trust in the value, benefits, and advantages that the M74VHC1GT14DFT2G brings to your designs, ensuring smooth operation and optimal results. Choose Onsemi for superior quality and innovation in electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for electronic components as it is lightweight, durable, and resistant to heat and chemicals.

Surface Mount: YES

Surface mount technology allows for easier and more efficient assembly of electronic circuits, making this product suitable for modern manufacturing processes.

Load Capacitance (CL): 50 pF

The low load capacitance of 50 pF ensures fast and efficient signal processing, making this logic gate ideal for high-speed applications.

Propagation Delay (tpd): 20.5 ns

With a low propagation delay of 20.5 ns, this logic gate can quickly respond to input signals, improving the overall performance of the circuit.

Schmitt Trigger: YES

The inclusion of a Schmitt trigger allows for hysteresis in the input signal, reducing noise and improving signal integrity.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor (CMOS) technology offers low power consumption, high noise immunity, and compatibility with a wide range of voltages, making this logic gate versatile and efficient.

Technical Specifications

Logic Gates M74VHC1GT14DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

20.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

M74VHC1GT14DFT2G Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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