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LC709203FXE-04MH

Onsemi

LC709203FXE-04MH by Onsemi

LC709203FXE-04MH by Onsemi is a Power Management IC with Vsup ranging from 2.5V to 4.5V, suitable for industrial applications. It features a compact rectangular package style, CMOS technology, and operates b/w -40°C to 85°C. This IC has 9 terminals in a grid array layout with very thin profile and fine pitch for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,331 parts In-Stock

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Digiode

USA . 121 parts In-Stock

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Nova Conductors

Japan . 53 parts In-Stock

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53

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Distributors (Availability)

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Ampacity Inc.

Singapore . 285 parts In-Stock

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$5.500

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285

$5.500

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AZTECH Wire

Italy . 740 parts In-Stock

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$11.205

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740

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Kulean Microsystems

USA . 7,497 parts In-Stock

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SupplyDigital Components

Austria . 6,547 parts In-Stock

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Problanco Electronics

Mexico . 5,525 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,793 parts In-Stock

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TANS Electronics

Latvia . 3,434 parts In-Stock

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Corphita

USA . 2,205 parts In-Stock

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2,205

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UHIMA Technologies

Türkiye . 697 parts In-Stock

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Corohmni

South Africa . 294 parts In-Stock

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Microchip USA

USA . 182 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Enhance your power management capabilities with the LC709203FXE-04MH by Onsemi. Crafted with precision and expertise, this Power Management IC delivers unparalleled performance and reliability. Ideal for a wide range of applications, from industrial to consumer electronics, this product offers customers exceptional value and efficiency. Say goodbye to power supply issues and welcome seamless operation with the LC709203FXE-04MH. Trust in Onsemi for cutting-edge technology that meets all your power management needs.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and flexibility to the product, making it suitable for various applications.

Surface Mount:

YES - The surface mount feature allows for easy and efficient installation on circuit boards, saving time and effort.

Package Shape:

RECTANGULAR - The rectangular shape ensures compatibility with standard board layouts, simplifying integration into existing systems.

Nominal Supply Voltage (Vsup):

3.6 V - The 3.6V supply voltage offers a stable power source for consistent performance in power management applications.

Power Supplies (V):

2.5/4.5 - With a range of power supply options, this product can support a variety of devices with different voltage requirements.

No. of Terminals:

9 - The 9 terminals provide multiple connection points for enhanced functionality and versatility in circuit design.

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH - This package style ensures a compact and space-saving design, ideal for applications with limited board space.

Maximum Operating Temperature:

85 °C - The high maximum operating temperature allows this product to withstand harsh environmental conditions and extended use.

Minimum Operating Temperature:

40 °C - The low minimum operating temperature enables operation in cold climates or industrial settings with low temperatures.

Terminal Finish:

TIN SILVER COPPER - The terminal finish of tin, silver, and copper enhances conductivity and ensures reliable connections for optimal performance.

Terminal Position:

BOTTOM - The bottom terminal position makes it easy to solder and secure the product to the circuit board for stable and durable installation.

Maximum Seated Height:

0.51 mm - The low seated height of 0.51 mm minimizes space requirements and allows for compact designs in tight installations.

Width (mm):

1.6 mm - The width of 1.6 mm provides a slim profile for the product, ideal for applications where space is limited.

Other IC type:

POWER SUPPLY SUPPORT CIRCUIT - This IC type enhances the product's capability to support and manage power supplies efficiently for various devices.

Minimum Supply Voltage (Vsup):

2.5 V - The 2.5V minimum supply voltage ensures compatibility with low-power devices, making it a versatile option for different applications.

Length:

1.76 mm - The length of 1.76 mm offers a compact size, suitable for designs where space is a concern.

Temperature Grade:

INDUSTRIAL - The industrial temperature grade ensures reliability and performance in demanding environments with varying temperature conditions.

Technology:

CMOS - The CMOS technology used in this product provides high efficiency and low power consumption for energy-efficient operation.

Terminal Form:

BALL - The ball terminal form offers secure connections and easy soldering for a reliable and robust assembly.

Terminal Pitch:

0.5 mm - The terminal pitch of 0.5 mm provides precise spacing for connections, ensuring proper alignment and reliable performance.

Maximum Supply Voltage (Vsup):

4.5 V - The 4.5V maximum supply voltage offers compatibility with devices requiring higher power inputs, expanding the product's application range.

Technical Specifications

Power Management ICs LC709203FXE-04MH attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

R-PBGA-B9

JESD-609 Code:

e1

Length:

1.76 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

9

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA9,3X3,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Power Supplies (V):

2.5/4.5

Qualification:

Not Qualified

Maximum Seated Height:

.51 mm

Sub-Category:

Power Management Circuits

Maximum Supply Voltage (Vsup):

4.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage (Vsup):

3.6 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width (mm):

1.6 mm

Trade Compliance

LC709203FXE-04MH Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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