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FJP5554TU

Onsemi

FJP5554TU by Onsemi

FJP5554TU by Onsemi is a NPN BJT transistor with 400V VCEO, 4A IC, and 70W Ptot. Ideal for switching applications, it comes in a PLASTIC/EPOXY package with through-hole terminals. Operating up to 150°C, it has a min hFE of 20 making it suitable for various power electronics designs.

Median Price

$0.500

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 391 parts In-Stock

1+ parts

$0.880

100+ parts

$0.529

1k+ parts

$0.375

10k+ parts

$0.305

391

$0.880

$0.529

$0.375

$0.305

Adafruit Industries

USA . 40 parts In-Stock

1+ parts

$1.561

100+ parts

$1.421

1k+ parts

$1.280

10k+ parts

-

40

$1.561

$1.421

$1.280

-

Rochester

USA . 2,651 parts In-Stock

1+ parts

-

100+ parts

$0.395

1k+ parts

$0.328

10k+ parts

$0.292

2,651

-

$0.395

$0.328

$0.292

DigiKey

USA . 1,701 parts In-Stock

1+ parts

-

100+ parts

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$0.500

10k+ parts

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1,701

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-

$0.500

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Verical

USA . 950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.411

10k+ parts

$0.367

950

-

-

$0.411

$0.367

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,975 parts In-Stock

1+ parts

$0.309

100+ parts

-

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-

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1,975

$0.309

-

-

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Vyrian

USA . 1,677 parts In-Stock

1+ parts

$0.325

100+ parts

-

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-

10k+ parts

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1,677

$0.325

-

-

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DigiKey Marketplace

USA . 1,701 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,701

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-

-

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Elcom Components

USA . 8 parts In-Stock

1+ parts

-

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-

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8

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,753 parts In-Stock

1+ parts

$0.292

100+ parts

-

1k+ parts

-

10k+ parts

-

2,753

$0.292

-

-

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Corohmni

South Africa . 264 parts In-Stock

1+ parts

$0.325

100+ parts

-

1k+ parts

-

10k+ parts

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264

$0.325

-

-

-

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.561

100+ parts

$1.421

1k+ parts

$1.280

10k+ parts

-

40

$1.561

$1.421

$1.280

-

Native Components

USA . 97 parts In-Stock

1+ parts

$20.568

100+ parts

-

1k+ parts

-

10k+ parts

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97

$20.568

-

-

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Northwest PG Solutions

USA . 237 parts In-Stock

1+ parts

$22.625

100+ parts

$20.362

1k+ parts

-

10k+ parts

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237

$22.625

$20.362

-

-

SupplyDigital Components

Austria . 6,815 parts In-Stock

1+ parts

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6,815

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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TANS Electronics

Latvia . 3,259 parts In-Stock

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3,259

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Supply Digital

USA . 2,852 parts In-Stock

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2,852

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Perfect Parts

USA . 2,228 parts In-Stock

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2,228

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Kulean Microsystems

USA . 1,566 parts In-Stock

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1,566

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Problanco Electronics

Mexico . 1,438 parts In-Stock

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1,438

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Continental Prestige Electronics

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.263

10k+ parts

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1,000

-

-

$0.263

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Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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UHIMA Technologies

Türkiye . 518 parts In-Stock

1+ parts

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518

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Overview

Enhance your electronic projects with the FJP5554TU by Onsemi, a top-of-the-line Power Bipolar Junction Transistor designed for high-performance switching applications. Manufactured by the trusted brand Onsemi, this NPN transistor offers unparalleled reliability and durability thanks to its quality construction and advanced technology. With a maximum power dissipation of 70W and a maximum collector-emitter voltage of 400V, this transistor is a powerhouse that delivers exceptional performance every time. Upgrade your circuits with the FJP5554TU and experience the difference that superior quality and precision engineering can make in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to implement in electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape enables easy mounting and installation in electronic circuits, saving space and simplifying layout design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly, ensuring stable electrical connections.

Maximum Power Dissipation (Abs): 70 W

High power dissipation capability allows for handling of high power loads without overheating or failure.

Package Style (Meter): FLANGE MOUNT

Flange mount style facilitates secure mounting and heat dissipation, enhancing the overall performance and reliability of the transistor.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures sufficient amplification of input signals, making the transistor suitable for various signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures and harsh operating conditions.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating allows for handling of high voltage loads, expanding the range of potential applications for this transistor.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor operation, ensuring stable and consistent behavior over time.

Maximum Collector Current (IC): 4 A

A maximum collector current of 4A enables handling of moderate to high current loads, making this transistor suitable for a wide range of applications.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and secure electrical connections, enhancing the overall durability and reliability of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in electronic circuits, ensuring easy integration and maintenance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJP5554TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FJP5554TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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