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FJP5200OTU

Onsemi

FJP5200OTU by Onsemi

FJP5200OTU by Onsemi is a NPN Power BJT with 250V VCE, 17A IC, and 80W power dissipation. Ideal for amplifier applications, it has a hFE of 80 and operates b/w -55 °C to 150°C. The transistor's package is rectangular with flange mount style and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,552 parts In-Stock

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Digiode

USA . 803 parts In-Stock

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Modulus Dynamics

Lithuania . 800 parts In-Stock

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$0.996

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$0.996

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$0.996

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800

$0.996

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$0.996

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Andel Nordic

Denmark . 2,551 parts In-Stock

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$2.982

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$2.863

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$2.863

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$2.863

Component Stockers USA

USA . 230 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 6,362 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Problanco Electronics

Mexico . 3,699 parts In-Stock

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Kulean Microsystems

USA . 3,490 parts In-Stock

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TANS Electronics

Latvia . 3,459 parts In-Stock

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Northwest PG Solutions

USA . 1,049 parts In-Stock

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UHIMA Technologies

Türkiye . 641 parts In-Stock

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Native Components

USA . 635 parts In-Stock

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Corphita

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Corohmni

South Africa . 234 parts In-Stock

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Supply Digital

USA . 139 parts In-Stock

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Overview

Enhance your amplifier designs with the FJP5200OTU by Onsemi. Manufactured by industry leader Onsemi, this Power BJT transistor offers unparalleled quality and reliability. Ideal for a wide range of applications, this NPN transistor delivers exceptional performance with a maximum power dissipation of 80W and a minimum DC current gain of 80. Whether you're amplifying signals or driving motors, this transistor is sure to exceed your expectations. Upgrade your projects with the FJP5200OTU and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Maximum VCEsat: 3 V

Low saturation voltage helps in minimizing power loss and improving efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation in various devices.

Maximum Power Dissipation (Abs): 80 W

High power dissipation capability allows the transistor to handle higher power levels, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures the transistor can operate reliably in different environments.

Maximum Collector-Emitter Voltage: 250 V

High collector-emitter voltage rating makes this transistor suitable for applications that require higher voltage handling capabilities.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency allows for faster switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJP5200OTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

FJP5200OTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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