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FJP5200RTU

Onsemi

FJP5200RTU by Onsemi

FJP5200RTU by Onsemi is a NPN BJT transistor with 250V VCE, 17A IC, and 80W Ptot. Ideal for amplifier applications, it has a hFE of 55, fT of 30MHz, and operates up to 150 °C. The package is through-hole with a flange mount style in plastic/epoxy material.

Median Price

$1.010

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 72 parts In-Stock

1+ parts

$0.779

100+ parts

$0.709

1k+ parts

$0.639

10k+ parts

-

72

$0.779

$0.709

$0.639

-

Rochester

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$1.240

1k+ parts

$1.030

10k+ parts

$0.918

1

-

$1.240

$1.030

$0.918

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,522 parts In-Stock

1+ parts

$0.740

100+ parts

-

1k+ parts

-

10k+ parts

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1,522

$0.740

-

-

-

Vyrian

USA . 5,660 parts In-Stock

1+ parts

-

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5,660

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,062 parts In-Stock

1+ parts

$0.701

100+ parts

-

1k+ parts

-

10k+ parts

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2,062

$0.701

-

-

-

Corohmni

South Africa . 325 parts In-Stock

1+ parts

$0.779

100+ parts

-

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-

10k+ parts

-

325

$0.779

-

-

-

Advanced Electronics

New Zealand . 72 parts In-Stock

1+ parts

$0.779

100+ parts

$0.709

1k+ parts

$0.639

10k+ parts

-

72

$0.779

$0.709

$0.639

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 11,600 parts In-Stock

1+ parts

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11,600

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Problanco Electronics

Mexico . 8,119 parts In-Stock

1+ parts

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8,119

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SupplyDigital Components

Austria . 7,918 parts In-Stock

1+ parts

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7,918

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Microchip USA

USA . 4,171 parts In-Stock

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4,171

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Supply Digital

USA . 1,682 parts In-Stock

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1,682

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Perfect Parts

USA . 1,626 parts In-Stock

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1,626

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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UHIMA Technologies

Türkiye . 805 parts In-Stock

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805

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TANS Electronics

Latvia . 708 parts In-Stock

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708

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Native Components

USA . 592 parts In-Stock

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592

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Kulean Microsystems

USA . 492 parts In-Stock

1+ parts

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492

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Northwest PG Solutions

USA . 51 parts In-Stock

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51

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Overview

Elevate your power management solutions with the FJP5200RTU by Onsemi. As a leading manufacturer in power bipolar junction transistors, Onsemi delivers top-notch quality and reliability. Ideal for amplifier applications, this NPN transistor offers a maximum collector-emitter voltage of 250V and a maximum collector current of 17A, providing powerful performance. With a minimum DC current gain of 55 and a nominal transition frequency of 30MHz, this transistor ensures efficient operation. Trust the FJP5200RTU to deliver superior power dissipation of up to 80W, making it the perfect choice for your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product suitable for amplification applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and functionality.

Package Shape: RECTANGULAR

Easily mountable and fits well within circuit designs, enhancing usability and integration.

Terminal Form: THROUGH-HOLE

Simplifies soldering and mounting, making it easier to incorporate into electronic circuits.

Maximum Power Dissipation (Abs): 80 W

Capable of handling high power levels, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Offers a secure mounting option, ensuring stability in various environments.

Minimum DC Current Gain (hFE): 55

Ensures consistent and reliable amplification performance in circuits.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 250 V

Supports high voltage applications, expanding the range of possible uses.

Transistor Element Material: SILICON

Provides good electrical properties and reliability compared to other materials.

Maximum Collector Current (IC): 17 A

Capable of handling high current levels, suitable for power applications.

Terminal Finish: TIN

Offers good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplifies circuit design and integration, enhancing usability.

Nominal Transition Frequency (fT): 30 MHz

Provides good frequency response for amplifier circuits, ensuring efficient signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJP5200RTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

55

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJP5200RTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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