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FJP5027R

Onsemi

FJP5027R by Onsemi

FJP5027R by Onsemi is a NPN Power BJT with 800V VCE, 3A IC, and 50W Pd. Ideal for switching applications, it has a tf of 300ns, ton of 500ns, and toff of 3300ns. With hFE of 15 and fT of 15MHz, this transistor operates up to 150 °C in a through-hole package.

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,965 parts In-Stock

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Vyrian

USA . 2,143 parts In-Stock

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Northwest PG Solutions

USA . 861 parts In-Stock

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$2.508

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,149 parts In-Stock

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Kulean Microsystems

USA . 5,075 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Problanco Electronics

Mexico . 2,416 parts In-Stock

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Supply Digital

USA . 2,000 parts In-Stock

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TANS Electronics

Latvia . 1,767 parts In-Stock

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SupplyDigital Components

Austria . 949 parts In-Stock

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Corphita

USA . 868 parts In-Stock

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Native Components

USA . 766 parts In-Stock

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Corohmni

South Africa . 263 parts In-Stock

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UHIMA Technologies

Türkiye . 232 parts In-Stock

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Overview

Unlock the power of innovation with the FJP5027R by Onsemi. As a leading manufacturer in the industry, Onsemi produces high-quality Power Bipolar Junction Transistors that offer exceptional performance and reliability. This NPN transistor is ideal for switching applications, providing a maximum VCEsat of 2V and a maximum collector current of 3A. With a maximum power dissipation of 50W and a temperature range up to 150 °C, this transistor ensures optimal functionality in various electronic devices. Trust Onsemi to deliver cutting-edge solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for the package, providing good protection and easy handling.

Polarity or Channel Type: NPN

NPN type allows for easy integration into circuits and compatibility with other components.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient and reliable operation.

Maximum VCEsat: 2 V

Low VCEsat value indicates minimal voltage drop when the transistor is conducting, leading to energy efficiency.

Package Shape: RECTANGULAR

Standard and easy to mount package shape for convenient installation.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and ease of soldering.

Maximum Fall Time (tf): 300 ns

Fast fall time ensures quick switching transitions for enhanced performance.

No. of Terminals: 3

Simple 3-terminal design for straightforward connections.

Maximum Power Dissipation (Abs): 50 W

High power dissipation capability for handling demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style for secure and stable mounting.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain of 15 ensures reliable amplification and efficiency.

Maximum Operating Temperature: 150 °C

Wide operating temperature range of up to 150 °C for versatility in different environments.

Maximum Collector-Emitter Voltage: 800 V

High VCE value allows for handling of high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material ensures robust and reliable performance.

Maximum Turn On Time (ton): 500 ns

Fast turn on time for quick response in switching operations.

Maximum Collector Current (IC): 3 A

High collector current rating of 3 A for handling high current loads.

Maximum Turn Off Time (toff): 3300 ns

Sufficient turn off time for proper switching and protection of the circuit.

Terminal Position: SINGLE

Single terminal position for straightforward connection.

Nominal Transition Frequency (fT): 15 MHz

High transition frequency for improved performance and speed in switching operations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJP5027R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

800 V

Configuration:

Minimum DC Current Gain (hFE):

15

Maximum Fall Time (tf):

300 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3300 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

2 V

Trade Compliance

FJP5027R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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