Loading...

FJP5555

Onsemi

FJP5555 by Onsemi

FJP5555 by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 5A. Ideal for switching applications, it has a min. DC current gain of 20 (hFE) and operates up to 150 °C. Its package style is flange mount, making it suitable for various power electronics designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,516 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,516

-

-

-

-

Vyrian

USA . 905 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

905

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 666 parts In-Stock

1+ parts

$51.600

100+ parts

-

1k+ parts

-

10k+ parts

$49.536

666

$51.600

-

-

$49.536

Northwest PG Solutions

USA . 1,324 parts In-Stock

1+ parts

$56.760

100+ parts

-

1k+ parts

-

10k+ parts

-

1,324

$56.760

-

-

-

Kulean Microsystems

USA . 7,197 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,197

-

-

-

-

Problanco Electronics

Mexico . 5,866 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,866

-

-

-

-

A-Z Elektronik GmbH

Germany . 4,935 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,935

-

-

-

-

Perfect Parts

USA . 4,480 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,480

-

-

-

-

Alle Elektronik GmbH

Germany . 3,290 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,290

-

-

-

-

SupplyDigital Components

Austria . 2,768 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,768

-

-

-

-

Supply Digital

USA . 2,233 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,233

-

-

-

-

Corphita

USA . 2,063 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,063

-

-

-

-

TANS Electronics

Latvia . 768 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

768

-

-

-

-

UHIMA Technologies

Türkiye . 444 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

444

-

-

-

-

Corohmni

South Africa . 176 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

176

-

-

-

-

Overview

Discover the power and reliability of Onsemi's FJP5555 Power Bipolar Junction Transistor. With a maximum operating temperature of 150 °C and a maximum collector-emitter voltage of 400V, this NPN transistor is perfect for switching applications. Its high-quality construction and single configuration make it a standout choice for engineers looking for durability and performance. Whether you're designing industrial machinery or automotive systems, the FJP5555 offers unmatched value and efficiency, ensuring your projects run smoothly and reliably. Experience the difference with Onsemi's FJP5555 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switches due to their high efficiency and low cost.

Configuration: SINGLE

Simplifies circuit design and allows for easy integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in these scenarios.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on circuit boards or heat sinks.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections during installation and usage.

No. of Terminals: 3

Simplifies connection and circuit layout, reducing complexity in design.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and secure attachment to heat sinks or other components.

Minimum DC Current Gain (hFE): 20

Ensures consistent and reliable amplification performance in various circuit applications.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, making it suitable for a wide range of industrial applications.

Maximum Collector-Emitter Voltage: 400 V

Capable of handling high voltage levels, enhancing its versatility in different circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in various circuit applications.

Maximum Collector Current (IC): 5 A

Capable of handling high current levels, making it suitable for power handling applications.

Terminal Position: SINGLE

Simple terminal configuration for easy installation and connection within circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJP5555 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FJP5555 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20