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FJP5304D

Onsemi

FJP5304D by Onsemi

FJP5304D by Onsemi is a NPN Power BJT with max. Vce of 400V and max. Ic of 4A. It has a min. hFE of 8, ideal for switching applications in various industries due to its single configuration and through-hole terminal form. The transistor's silicon element material ensures reliable performance in flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,815 parts In-Stock

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Digiode

USA . 1,939 parts In-Stock

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Andel Nordic

Denmark . 1,283 parts In-Stock

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$8.794

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$8.442

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$8.442

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$8.442

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,002 parts In-Stock

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SupplyDigital Components

Austria . 7,637 parts In-Stock

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Problanco Electronics

Mexico . 6,514 parts In-Stock

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Kulean Microsystems

USA . 6,027 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,427 parts In-Stock

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TANS Electronics

Latvia . 4,502 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,618 parts In-Stock

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Corphita

USA . 3,002 parts In-Stock

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Northwest PG Solutions

USA . 1,291 parts In-Stock

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Supply Digital

USA . 1,177 parts In-Stock

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UHIMA Technologies

Türkiye . 647 parts In-Stock

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Corohmni

South Africa . 354 parts In-Stock

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Native Components

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Overview

Elevate your power switching applications with the FJP5304D by Onsemi. Crafted with precision and expertise, this NPN Power Bipolar Junction Transistor offers reliable performance and durability. Whether you're in the automotive, industrial, or consumer electronics sector, this transistor ensures smooth and efficient operation. Experience the value and benefits of Onsemi's top-notch quality and enhance your products with the FJP5304D. Trust in Onsemi for superior technology that delivers exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, perfect for applications where weight and durability are important factors.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and analog circuits, making this transistor versatile and suitable for a wide range of applications.

Configuration: SINGLE

Single configuration transistors are easy to use and can simplify circuit design, making them a convenient choice for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current, making it ideal for use in power management circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package can easily fit into circuit boards, providing a space-saving solution for compact electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals are sturdy and easy to solder, providing a reliable connection in electronic circuits for stable performance.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into circuits for efficient signal processing and power management.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy mounting on a surface or chassis, providing stability and heat dissipation for optimal performance.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 ensures reliable amplification of input signals, making this transistor suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 400 V

With a maximum collector-emitter voltage of 400V, this transistor can handle high voltage applications, providing versatility in circuit design.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this transistor a durable and efficient choice for various electronic applications.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4A, this transistor can handle moderate to high-power applications, making it suitable for power management circuits.

Terminal Position: SINGLE

The single terminal position simplifies circuit connection and layout, making it easy to integrate this transistor into electronic designs for improved efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJP5304D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FJP5304D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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