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FJP5027

Onsemi

FJP5027 by Onsemi

FJP5027 by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 800V, ideal for switching applications. It has a min. DC current gain of 8 and max. collector current of 3A, operating up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape, suitable for various power electronics designs.

Median Price

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2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,831 parts In-Stock

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Digiode

USA . 619 parts In-Stock

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619

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Native Components

USA . 711 parts In-Stock

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$0.422

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$0.405

711

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$0.405

Northwest PG Solutions

USA . 14 parts In-Stock

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$0.464

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$0.409

14

$0.464

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$0.409

Andel Nordic

Denmark . 5,619 parts In-Stock

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$3.342

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$3.208

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$3.208

5,619

$3.342

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$3.208

Metaverse IC Inc.

Canada . 80,000 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 7,469 parts In-Stock

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7,469

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Problanco Electronics

Mexico . 2,156 parts In-Stock

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SupplyDigital Components

Austria . 1,764 parts In-Stock

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Corphita

USA . 1,739 parts In-Stock

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Supply Digital

USA . 774 parts In-Stock

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Kulean Microsystems

USA . 501 parts In-Stock

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UHIMA Technologies

Türkiye . 455 parts In-Stock

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Corohmni

South Africa . 319 parts In-Stock

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319

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Overview

Experience the reliable performance and unmatched quality of the FJP5027 by Onsemi, a leading manufacturer in power bipolar junction transistors. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 800V and a maximum collector current of 3A, ensuring efficient power management. With a package style of flange mount and a minimum DC current gain of 8, this transistor is designed for seamless integration and optimal functionality. Trust Onsemi's expertise and elevate your projects with the FJP5027.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, providing good protection for the internal components.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes the transistor easy to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in control circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and handling of the transistor in electronic projects.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder the transistor onto a PCB for secure connections.

No. of Terminals: 3

Having 3 terminals allows for simple connections in circuits, reducing complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers mechanical stability and ease of mounting in a fixed position.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 ensures reliable and stable amplification in transistor circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 800 V

A high maximum collector-emitter voltage rating of 800V allows for use in high voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and efficiency in transistor operation, making it a reliable choice for electronic circuits.

Maximum Collector Current (IC): 3 A

With a maximum collector current rating of 3A, this transistor can handle moderate to high current loads in circuits.

Terminal Position: SINGLE

Single terminal position simplifies connections and makes it easy to integrate the transistor into electronic circuits.

Nominal Transition Frequency (fT): 15 MHz

A high nominal transition frequency of 15 MHz enables fast switching speeds in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJP5027 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

800 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJP5027 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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