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FJP5027RTU

Onsemi

FJP5027RTU by Onsemi

FJP5027RTU by Onsemi is a NPN Power BJT with 800V VCEO, 3A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 15 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals suitable for flange mounting.

Median Price

$1.100

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,000 parts In-Stock

1+ parts

$1.100

100+ parts

$0.707

1k+ parts

$0.488

10k+ parts

$0.417

1,000

$1.100

$0.707

$0.488

$0.417

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$1.664

100+ parts

$1.514

1k+ parts

$1.364

10k+ parts

-

5,000

$1.664

$1.514

$1.364

-

DigiKey

USA . 775 parts In-Stock

1+ parts

$1.690

100+ parts

$0.719

1k+ parts

$0.567

10k+ parts

-

775

$1.690

$0.719

$0.567

-

Rochester

USA . 12,169 parts In-Stock

1+ parts

-

100+ parts

$0.593

1k+ parts

$0.492

10k+ parts

$0.439

12,169

-

$0.593

$0.492

$0.439

Verical

USA . 10,828 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.616

10k+ parts

$0.549

10,828

-

-

$0.616

$0.549

Flip Electronics (Authorized)

USA . 222 parts In-Stock

1+ parts

-

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-

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222

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,682 parts In-Stock

1+ parts

$0.462

100+ parts

-

1k+ parts

-

10k+ parts

-

2,682

$0.462

-

-

-

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.504

100+ parts

-

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-

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550

$0.504

-

-

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Vyrian

USA . 5,669 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,669

-

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Flip Electronics

USA . 222 parts In-Stock

1+ parts

-

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-

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222

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Ack Elektronik San.Tic.Ltd.Sti

. 8 parts In-Stock

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8

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 5,348 parts In-Stock

1+ parts

$0.413

100+ parts

-

1k+ parts

-

10k+ parts

-

5,348

$0.413

-

-

-

Corphita

USA . 2,191 parts In-Stock

1+ parts

$0.437

100+ parts

-

1k+ parts

-

10k+ parts

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2,191

$0.437

-

-

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Corohmni

South Africa . 301 parts In-Stock

1+ parts

$0.484

100+ parts

-

1k+ parts

-

10k+ parts

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301

$0.484

-

-

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Argo Parts USA

USA . 1,640 parts In-Stock

1+ parts

$0.504

100+ parts

-

1k+ parts

-

10k+ parts

$0.489

1,640

$0.504

-

-

$0.489

Continental Prestige Electronics

USA . 815 parts In-Stock

1+ parts

$0.504

100+ parts

-

1k+ parts

-

10k+ parts

$0.494

815

$0.504

-

-

$0.494

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.664

100+ parts

$1.514

1k+ parts

$1.364

10k+ parts

-

5,000

$1.664

$1.514

$1.364

-

Andel Nordic

Denmark . 5,343 parts In-Stock

1+ parts

$3.230

100+ parts

-

1k+ parts

$3.101

10k+ parts

$3.101

5,343

$3.230

-

$3.101

$3.101

Microchip USA

USA . 2,423 parts In-Stock

1+ parts

$7.220

100+ parts

$7.170

1k+ parts

$7.150

10k+ parts

$7.130

2,423

$7.220

$7.170

$7.150

$7.130

Perfect Parts

USA . 46,256 parts In-Stock

1+ parts

-

100+ parts

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46,256

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

1+ parts

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QUARKTWIN TECHNOLOGY LTD

USA . 9,707 parts In-Stock

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9,707

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S.R.D Solutions

India . 6,193 parts In-Stock

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6,193

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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SupplyDigital Components

Austria . 5,748 parts In-Stock

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5,748

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TANS Electronics

Latvia . 4,740 parts In-Stock

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4,740

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Problanco Electronics

Mexico . 4,381 parts In-Stock

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4,381

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Kulean Microsystems

USA . 3,636 parts In-Stock

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3,636

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.494

1k+ parts

$0.479

10k+ parts

$0.469

2,000

-

$0.494

$0.479

$0.469

GreenTree Electronics

Israel . 2,000 parts In-Stock

1+ parts

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2,000

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UHIMA Technologies

Türkiye . 547 parts In-Stock

1+ parts

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547

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Supply Digital

USA . 291 parts In-Stock

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291

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Overview

Enhance your power management solutions with the FJP5027RTU by Onsemi. As a leading manufacturer of Power Bipolar Junction Transistors, Onsemi ensures top-notch quality and reliability in every product. Perfect for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 800V and a maximum operating temperature of 150°C. With a maximum power dissipation of 50W, this transistor provides high performance and efficiency. Upgrade your electronic devices with the FJP5027RTU and experience superior power control like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications in different environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Simplified design and easy integration into circuits due to single configuration.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in such scenarios.

Maximum Power Dissipation (Abs): 50 W

Capable of handling high power levels without overheating, suitable for demanding applications.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, ensuring stability in various environments.

Maximum Collector-Emitter Voltage: 800 V

Capable of handling high voltages, making it suitable for high-power applications.

Minimum DC Current Gain (hFE): 15

Ensures efficient amplification of current in the transistor, enhancing overall performance.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable and durable connection for the terminals, ensuring long-term stability.

Nominal Transition Frequency (fT): 15 MHz

High transition frequency allows for fast switching speeds, ideal for applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJP5027RTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

800 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJP5027RTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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