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FJP5555TU

Onsemi

FJP5555TU by Onsemi

FJP5555TU by Onsemi is a NPN BJT transistor with 400V VCEO and 5A IC, ideal for switching applications. It has a max power dissipation of 75W and operates up to 150°C. Packaged in PLASTIC/EPOXY material, it features a single configuration with through-hole terminals for easy mounting.

Median Price

$0.680

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 950 parts In-Stock

1+ parts

$1.612

100+ parts

$0.677

1k+ parts

$0.459

10k+ parts

$0.393

950

$1.612

$0.677

$0.459

$0.393

Mouser Electronics

USA . 265 parts In-Stock

1+ parts

$1.650

100+ parts

$0.697

1k+ parts

$0.461

10k+ parts

$0.401

265

$1.650

$0.697

$0.461

$0.401

Rochester

USA . 7,343 parts In-Stock

1+ parts

-

100+ parts

$0.545

1k+ parts

$0.453

10k+ parts

$0.403

7,343

-

$0.545

$0.453

$0.403

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.566

10k+ parts

$0.504

6,000

-

-

$0.566

$0.504

DigiKey

USA . 1,969 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.680

10k+ parts

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1,969

-

-

$0.680

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Chip1Stop

Japan . 1,950 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.507

10k+ parts

-

1,950

-

-

$0.507

-

RS (Exports)

UK . 50 parts In-Stock

1+ parts

-

100+ parts

$0.833

1k+ parts

$0.798

10k+ parts

-

50

-

$0.833

$0.798

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,711 parts In-Stock

1+ parts

$0.408

100+ parts

-

1k+ parts

-

10k+ parts

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2,711

$0.408

-

-

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Digiode

USA . 2,269 parts In-Stock

1+ parts

$0.424

100+ parts

-

1k+ parts

-

10k+ parts

-

2,269

$0.424

-

-

-

Bristol Electronics

USA . 1,900 parts In-Stock

1+ parts

$1.059

100+ parts

$0.423

1k+ parts

$0.296

10k+ parts

$0.275

1,900

$1.059

$0.423

$0.296

$0.275

K-1 Technologies

USA . 92,202 parts In-Stock

1+ parts

-

100+ parts

-

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92,202

-

-

-

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DigiKey Marketplace

USA . 1,969 parts In-Stock

1+ parts

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100+ parts

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1,969

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-

-

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ACDS - Activité Composants Distribution Service

France . 1,900 parts In-Stock

1+ parts

-

100+ parts

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1,900

-

-

-

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Dan-Mar Components

USA . 1,900 parts In-Stock

1+ parts

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100+ parts

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1,900

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-

-

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Flip Electronics

USA . 1,000 parts In-Stock

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1,000

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,667 parts In-Stock

1+ parts

$0.401

100+ parts

-

1k+ parts

-

10k+ parts

-

2,667

$0.401

-

-

-

Corohmni

South Africa . 223 parts In-Stock

1+ parts

$0.408

100+ parts

-

1k+ parts

-

10k+ parts

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223

$0.408

-

-

-

Component Stockers USA

USA . 6,118 parts In-Stock

1+ parts

$0.460

100+ parts

$0.430

1k+ parts

$0.390

10k+ parts

-

6,118

$0.460

$0.430

$0.390

-

Andel Nordic

Denmark . 4,585 parts In-Stock

1+ parts

$11.416

100+ parts

-

1k+ parts

$10.959

10k+ parts

$10.959

4,585

$11.416

-

$10.959

$10.959

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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100+ parts

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56,986

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

1+ parts

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30,000

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QUARKTWIN TECHNOLOGY LTD

USA . 11,510 parts In-Stock

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11,510

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Continental Prestige Electronics

USA . 6,776 parts In-Stock

1+ parts

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100+ parts

$0.540

1k+ parts

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6,776

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$0.540

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SupplyDigital Components

Austria . 6,096 parts In-Stock

1+ parts

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6,096

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Kulean Microsystems

USA . 5,666 parts In-Stock

1+ parts

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5,666

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TANS Electronics

Latvia . 4,894 parts In-Stock

1+ parts

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4,894

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A-Z Elektronik GmbH

Germany . 4,695 parts In-Stock

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4,695

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Perfect Parts

USA . 3,324 parts In-Stock

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3,324

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Alle Elektronik GmbH

Germany . 3,130 parts In-Stock

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3,130

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Supply Digital

USA . 1,710 parts In-Stock

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1,710

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-

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Problanco Electronics

Mexico . 753 parts In-Stock

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753

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Native Components

USA . 599 parts In-Stock

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599

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Northwest PG Solutions

USA . 489 parts In-Stock

1+ parts

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489

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-

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UHIMA Technologies

Türkiye . 375 parts In-Stock

1+ parts

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375

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Overview

Upgrade your power management solutions with the FJP5555TU by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Power Bipolar Junction Transistors that are perfect for switching applications. With a maximum power dissipation of 75 W and a maximum collector-emitter voltage of 400 V, this NPN transistor offers reliability and efficiency. Whether you're looking to enhance your electronic devices or improve your energy efficiency, the FJP5555TU provides the performance and value you need. Experience the advantages of Onsemi's trusted technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching circuits and amplifier applications, offering flexibility and efficiency in design.

Configuration: SINGLE

Single configuration transistors are easier to handle and integrate into circuits, simplifying the overall design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast and efficient switching operations.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and placement on circuit boards, improving overall space efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, ensuring stable performance in various operating conditions.

Maximum Power Dissipation (Abs): 75 W

High power dissipation capability allows the transistor to handle significant power levels without overheating, ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables easy mounting and dismounting of the transistor, facilitating maintenance and replacement processes.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures reliable amplification of current signals, enabling stable performance in various amplification applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures reliable operation even in extreme temperature conditions.

Maximum Collector-Emitter Voltage: 400 V

High maximum collector-emitter voltage rating of 400V allows the transistor to withstand high voltage applications, providing versatile use cases.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor, making it ideal for various electronic applications.

Maximum Collector Current (IC): 5 A

High maximum collector current rating of 5A allows the transistor to handle significant current levels, ensuring reliable operation in various circuits.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin terminal finish provides good conductivity and solderability, ensuring secure connections and overall performance of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures proper alignment, making it easier to integrate into circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJP5555TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FJP5555TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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