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CPH3351

Onsemi

CPH3351 by Onsemi

CPH3351 by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and 1.8A max drain current. This MOSFET has 0.25 ohm max on resistance, GULL WING terminals, and operates in enhancement mode for efficient performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,090 parts In-Stock

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Digiode

USA . 1,796 parts In-Stock

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Native Components

USA . 702 parts In-Stock

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$1.855

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Northwest PG Solutions

USA . 1,423 parts In-Stock

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Problanco Electronics

Mexico . 5,879 parts In-Stock

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TANS Electronics

Latvia . 5,397 parts In-Stock

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SupplyDigital Components

Austria . 2,653 parts In-Stock

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Kulean Microsystems

USA . 1,246 parts In-Stock

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Corphita

USA . 1,011 parts In-Stock

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UHIMA Technologies

Türkiye . 581 parts In-Stock

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Corohmni

South Africa . 54 parts In-Stock

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Overview

Enhance your electronic devices with the CPH3351 by Onsemi, a high-quality P-channel small signal FET that offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for switching applications and comes in a convenient surface-mount package. With a minimum DS breakdown voltage of 60V and a maximum drain current of 1.8A, this transistor delivers exceptional value and efficiency. Upgrade your products today with the CPH3351 and experience the benefits of enhanced performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching and control of current flow, making it suitable for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in control circuits.

Surface Mount: YES

Facilitates easy installation and integration into surface mount PCBs, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 60 V

Offers a high breakdown voltage, ensuring reliable operation in applications with varying voltage requirements.

Package Shape: RECTANGULAR

Optimizes space utilization on the PCB, allowing for compact design and efficient use of available space.

Terminal Form: GULL WING

Provides secure and reliable connections to the PCB, reducing the risk of disconnection or malfunction.

Operating Mode: ENHANCEMENT MODE

Enables easy control of the transistor's conductivity, offering flexibility in adjusting the device for different applications.

No. of Terminals: 3

Simplifies circuit layout and wiring connections, reducing complexity in the design and assembly process.

Package Style (Meter): SMALL OUTLINE

Compact and lightweight design makes it suitable for space-constrained applications, while also facilitating easier handling during installation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides reliable and consistent performance, ensuring stable operation in various operating conditions.

Transistor Element Material: SILICON

Known for its high conductivity and durability, ensuring long-term reliability and performance of the transistor.

Maximum Drain Current (ID): 1.8 A

With a high maximum drain current rating, the transistor can handle higher current loads, making it suitable for demanding applications.

Maximum Drain-Source On Resistance: 0.25 ohm

Low on-resistance minimizes power loss and allows for efficient current flow, improving overall performance and energy efficiency.

Terminal Position: DUAL

Allows for versatile mounting options and easy integration into different circuit configurations, enhancing flexibility in design.

Technical Specifications

Small Signal Field Effect Transistors (FET) CPH3351 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

1.8 A

Maximum Drain-Source On Resistance:

.25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CPH3351 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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