Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
Median Price
-
Lifecycle Status
Suppliers In-Stock
6
In-Stock Inventory
1k+
Chip Stock
1+ parts
100+ parts
1k+ parts
10k+ parts
Digiode
Nova Conductors
Vyrian
ACDS - Activité Composants Distribution Service
Holdelec - ElecDif-Pro
Aztec Data Supply Inc.
$1.700
AZTECH Wire
$12.502
Semicontronic
$50.050
$48.799
$48.548
Kepictronics
Problanco Electronics
Kulean Microsystems
Continental Prestige Electronics
TANS Electronics
Argo Parts USA
SupplyDigital Components
iodParts Technologies Inc.
UHIMA Technologies
Corphita
Corohmni
Bastille Electronics
Small Signal Field Effect Transistors (FET) CPH3356-TL-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Sanyo Semiconductor
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
CPH3356-TL-H Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PHOENIX, Ariz. and TOKYO, Japan – Jan. 3, 2011 – ON Semiconductor Corporation (Nasdaq: ONNN) today announced the completion of the acquisition of SANYO Semiconductor Co., Ltd., a subsidiary of SANYO Electric, and other assets related to SANYO Electric’s semiconductor business, by ON Semiconductor. Under the terms of the purchase agreement, ON Semiconductor paid approximately ¥11.8 billion ($144 million) in cash to SANYO Electric and drew down approximately ¥31.7 billion ($378 million) under a loan agreement with SANYO Electric. “The combination with SANYO Semiconductor represents an important step in the continued transformation of ON Semiconductor into a premier global supplier of high-performance silicon solutions for energy efficient electronics,” said Keith Jackson, president and CEO of ON Semiconductor. “This acquisition enables us to expand wholeheartedly into the Japanese market and to capture growth on a global basis. We believe this acquisition will create immediate value for customers, partners and investors, and we are excited to welcome the employees of SANYO Semiconductor to the ON Semiconductor family.”
2N7002
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
BSS138LT3G
Onsemi
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
DS18B20
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Shape or Style: ROUND; Housing: PLASTIC; Output Interface Type: 1-WIRE INTERFACE;
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
1N4148
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Vishay Intertechnology
Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.
SMBJ18CA
Continental Device India
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Microchip Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
CR0805-FX-10R0ELF
Bourns
Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
INA826AIDGKR
Texas Instruments
INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
M24308/2-1F
Air Electro
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; MIL Conformity: YES; Additional Features: STANDARD: MIL-DTL-24308;
MBR0520L-T1
Won-top Electronics
MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.
LM358AN
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
LM358DT
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
OHN3140U
Tt Electronics Plc
OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.
National Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002DW
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Operating Temperature: 150 Cel;
BSS138
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS138G
BSS138G by Changzhou Galaxy Century Microelectronics is a N-CHANNEL FET with 50V DS Breakdown Voltage. It's used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max Drain Current of 0.22A. The transistor features a PLASTIC/EPOXY package, GULL WING terminals, and can withstand temperatures from -55 to 150 °C.
FDS4435BZ
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
BC548B
NPN; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
BSS138L
BSS138L by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max drain current of 0.2A. With surface mount capability and small outline package style, it offers efficient performance in various electronic circuits.
LBSS84LT1G
Leshan Radio
LBSS84LT1G by Leshan Radio is a P-CHANNEL small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.13A and a max power dissipation of 0.225W.
FDMC8030
FDMC8030 by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 50A Max Pulsed Drain Current, and 21mJ Avalanche Energy Rating. With a SQUARE package shape and NO LEAD terminals, it operates in ENHANCEMENT MODE with a max power dissipation of 14W at 150°C.
NTR4171PT1G
NTR4171PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 2.2A max drain current, and 0.075 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.25W at 150°C.
BSS123LT1G
BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.
BSS84
Nexperia
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BS170
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Terminal Form: THROUGH-HOLE; Terminal Finish: TIN LEAD;
DN3135K1-G
DN3135K1-G by Microchip Technology is a N-CHANNEL FET for SWITCHING applications. It has a 350V DS Breakdown Voltage, 0.36W Power Dissipation, and -55 to 150°C Operating Temperature range. The package is RECTANGULAR with GULL WING terminals in SMALL OUTLINE style.
2N7002K
2N7002K by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 2 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 150 °C.
NTJD4401NT1G
NTJD4401NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. With a max drain current of 0.63A and on resistance of 0.375 ohm, it's ideal for small outline packages in high-temp environments up to 150°C.
MMBF170LT3
MMBF170LT3 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5A max drain current and 0.225W power dissipation, it offers reliable performance in small outline packages.
FDS6681Z
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7000
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; No. of Elements: 1;
2N7002K-TP
Micro Commercial Components
2N7002K-TP by Micro Commercial Components is a N-channel FET with 60V DS breakdown voltage. Ideal for switching applications, it features single configuration with built-in diode and operates in enhancement mode. With 3 terminals, matte tin finish, and max drain current of 0.34A, this MOSFET has a peak reflow temperature of 260°C.
BSS123_R1_00001
Panjit International
Panjit International's BSS123_R1_00001 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, this MOSFET has GULL WING terminals and matte tin finish.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
CPH3362-TL-W
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; JESD-609 Code: e6; Maximum Feedback Capacitance (Crss): 7.3 pF;
CPH3351-TL-W
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JEDEC-95 Code: TO-236; Minimum DS Breakdown Voltage: 60 V;
CPH3910-TL-E
CPH3910-TL-E by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.4 W and can handle a max drain current of 0.05 A. Ideal for AMPLIFIER applications due to its small outline package style and low feedback capacitance of 2.3 pF.
CPH3356-TL-H
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 20 V; Transistor Element Material: SILICON;
CPH3459-TL-W
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .5 A;
CPH3462-TL-W
CPH3462-TL-W by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 1A max drain current, and 0.785 ohm RDS(on). Ideal for small outline applications requiring high power dissipation up to 1W at 150°C. Suitable for surface mount designs due to its gull wing terminals and built-in diode configuration.
CPH3448
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .05 ohm; JESD-30 Code: R-PDSO-G3; Package Shape: RECTANGULAR;
CPH3355-TL-H
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
CPH3448-TL-H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING;
CPH3351
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 1.8 A;
CPH3355-TL-W
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 1; No. of Terminals: 3;
CPH3448-TL-W
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Terminal Position: DUAL; Terminal Finish: TIN BISMUTH;
CPH3448TL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 1; No. of Terminals: 3;
CPH3350-TL-W
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON; Terminal Form: GULL WING;
CPH3351TL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; JESD-30 Code: R-PDSO-G3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
CPH3356-TL-W
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE;
CPH3360-TL-H
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
CPH3348-TL-W
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Transistor Element Material: SILICON; Terminal Position: DUAL;
CPH3348-TL-E
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain Current (Abs) (ID): 3 A; Operating Mode: ENHANCEMENT MODE;
CPH3356
Sanyo Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236; Transistor Element Material: SILICON; No. of Elements: 1;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved