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CPH3355-TL-W

Onsemi

CPH3355-TL-W by Onsemi

CPH3355-TL-W by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 2.5A ID. Ideal for small signal applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1W. Suitable for surface mount designs with GULL WING terminals, this MOSFET offers 0.156 ohm RDS(on) and can withstand temperatures up to 150 °C.

Median Price

$0.750

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 18 parts In-Stock

1+ parts

$1.210

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18

$1.210

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Flip Electronics (Authorized)

USA . 21,268 parts In-Stock

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21,268

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DigiKey

USA . 15,568 parts In-Stock

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$0.290

15,568

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$0.290

Distributors (In-Stock)

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Vyrian

USA . 1,472 parts In-Stock

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$0.290

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1,472

$0.290

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Digiode

USA . 1,109 parts In-Stock

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$1.150

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1,109

$1.150

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Chip Stock

USA . 49,000 parts In-Stock

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49,000

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Flip Electronics

USA . 15,568 parts In-Stock

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15,568

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South Electronics

USA . 6,000 parts In-Stock

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6,000

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Distributors (Availability)

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Corohmni

South Africa . 32 parts In-Stock

1+ parts

$0.487

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-

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32

$0.487

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Corphita

USA . 1,685 parts In-Stock

1+ parts

$1.089

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1,685

$1.089

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.422

100+ parts

$1.294

1k+ parts

$1.166

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-

2,500

$1.422

$1.294

$1.166

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 39,420 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,672 parts In-Stock

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Kulean Microsystems

USA . 7,992 parts In-Stock

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7,992

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SupplyDigital Components

Austria . 7,142 parts In-Stock

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Problanco Electronics

Mexico . 6,935 parts In-Stock

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6,935

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TANS Electronics

Latvia . 5,397 parts In-Stock

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Kepictronics

USA . 5,300 parts In-Stock

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5,300

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Native Components

USA . 989 parts In-Stock

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$4.718

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989

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$4.718

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UHIMA Technologies

Türkiye . 655 parts In-Stock

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655

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Northwest PG Solutions

USA . 67 parts In-Stock

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$4.767

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67

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$4.767

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Authorized Procurement Solutions

USA . 18 parts In-Stock

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18

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Overview

Upgrade your electronics with the CPH3355-TL-W by Onsemi, a top-quality P-CHANNEL Small Signal Field Effect Transistor that offers exceptional performance and reliability. Manufactured by industry leader Onsemi, this FET features a single configuration with a built-in diode for added convenience. Ideal for a wide range of applications, this transistor is designed for enhancement mode operation and delivers a maximum drain current of 2.5A. With a compact package style and a maximum operating temperature of 150 °C, the CPH3355-TL-W provides customers with value, efficiency, and peace of mind for all their electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET, ensuring reliability in various operating conditions.

Polarity or Channel Type: P-CHANNEL

Allows for easy integration into circuits where P-channel FETs are required, enhancing compatibility and functionality.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode, reducing the need for additional components and saving space.

Surface Mount: YES

Enables easy and efficient assembly onto circuit boards, making the FET suitable for high-volume production.

Minimum DS Breakdown Voltage: 30 V

Provides a high breakdown voltage, making the FET suitable for applications requiring reliable operation under high voltage conditions.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting onto circuit boards, optimizing space utilization in compact electronic devices.

Terminal Form: GULL WING

Offers secure and reliable connections during assembly, reducing the risk of solder joint failures and ensuring long-term performance.

Operating Mode: ENHANCEMENT MODE

Allows for precise control of the FET's conductivity, enabling efficient switching and amplification in electronic circuits.

No. of Terminals: 3

Simplifies circuit connections and PCB layout design by requiring fewer terminal connections.

Maximum Power Dissipation (Abs): 1 W

Supports high power dissipation levels, ensuring the FET can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

Fits into compact electronic devices with limited space, making it suitable for size-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides efficient switching characteristics and low on-state resistance, enhancing the performance of the FET in various applications.

Maximum Operating Temperature: 150 °C

Maintains reliable operation at high temperatures, making the FET suitable for applications in harsh environmental conditions.

Transistor Element Material: SILICON

Ensures high reliability and durability of the FET, offering stable performance over an extended operating lifespan.

Terminal Finish: TIN BISMUTH

Facilitates reliable soldering connections during assembly, ensuring robust electrical connections for stable circuit performance.

Maximum Drain Current (ID): 2.5 A

Supports high drain current requirements, making the FET suitable for power applications that demand efficient current handling.

Maximum Drain-Source On Resistance: 0.156 ohm

Provides low on-resistance, reducing power losses and improving efficiency in electronic circuits utilizing the FET.

Terminal Position: DUAL

Allows for flexible mounting and orientation on PCBs, enhancing design versatility and compatibility with different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering during assembly processes, maintaining the integrity of solder joints for long-term performance.

Peak Reflow Temperature °C: 260

Supports high-temperature reflow soldering processes, ensuring secure and reliable connections for the FET during assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) CPH3355-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

.156 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

CPH3355-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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