Loading...

CPH3448

Onsemi

CPH3448 by Onsemi

CPH3448 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 4A ID. It is used for switching applications in enhancement mode, featuring a built-in diode and 0.05 ohm RDS(on). The small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,417 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,417

-

-

-

-

Vyrian

USA . 136 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

136

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 689 parts In-Stock

1+ parts

$1.507

100+ parts

-

1k+ parts

-

10k+ parts

-

689

$1.507

-

-

-

Northwest PG Solutions

USA . 1,846 parts In-Stock

1+ parts

$1.657

100+ parts

-

1k+ parts

-

10k+ parts

-

1,846

$1.657

-

-

-

Kulean Microsystems

USA . 6,994 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,994

-

-

-

-

SupplyDigital Components

Austria . 6,969 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,969

-

-

-

-

Problanco Electronics

Mexico . 3,920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,920

-

-

-

-

TANS Electronics

Latvia . 2,162 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,162

-

-

-

-

Corphita

USA . 1,729 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,729

-

-

-

-

UHIMA Technologies

Türkiye . 467 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

467

-

-

-

-

Corohmni

South Africa . 173 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

173

-

-

-

-

Overview

Enhance your electronic projects with the high-quality CPH3448 from Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient Small Signal Field Effect Transistors for various applications such as switching. With its N-CHANNEL configuration and built-in diode feature, this transistor offers superior performance and functionality. Experience seamless operation and optimal power management with the CPH3448, making it a must-have component for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY is a common and durable material for electronic components, ensuring reliability and longevity.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have better performance and lower on-state resistance compared to P-CHANNEL FETs, making them a good choice for high-efficiency applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and can protect the transistor from voltage spikes, enhancing overall reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can turn on and off quickly, making it ideal for use in power supplies, converters, and motor control circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing costs in production.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this FET can handle higher voltages, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into circuit designs and efficient use of board space.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and stability during soldering, ensuring a reliable connection to the PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs require a positive voltage to turn on, which can prevent accidental activation and improve overall circuit safety.

No. of Terminals: 3

Having only 3 terminals simplifies circuit design and reduces the chance of wiring errors, making this FET easier to work with.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, allowing for more components to be placed in a limited area.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics and high efficiency, making this FET a reliable choice for various applications.

Transistor Element Material: SILICON

Silicon-based transistors are known for their stability, consistent performance, and high temperature tolerance, ensuring long-lasting functionality.

Maximum Drain Current (ID): 4 A

With a maximum drain current of 4 A, this FET can handle high-power applications, making it suitable for use in motor control and power supply circuits.

Maximum Drain-Source On Resistance: 0.05 ohm

The low on-resistance of 0.05 ohms minimizes power loss and heat dissipation, making this FET efficient for high-current applications.

Terminal Position: DUAL

Having dual terminal positions allows for easy and flexible PCB layout, giving designers more options for connecting the FET in their circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) CPH3448 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CPH3448 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20