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CAX810ZTBI-T3

Onsemi

CAX810ZTBI-T3 by Onsemi

CAX810ZTBI-T3 by Onsemi is a Power Management IC with 2.5V nominal voltage, -40 to 85 °C operating temperature range, and 1.22mm max seated height. It is ideal for power supply support circuits in industrial applications due to its small outline, low profile package style and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,432 parts In-Stock

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7,432

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Digiode

USA . 1,905 parts In-Stock

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1,905

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Distributors (Availability)

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AZTECH Wire

Italy . 395 parts In-Stock

1+ parts

$21.060

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395

$21.060

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Corohmni

South Africa . 592 parts In-Stock

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$22.396

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592

$22.396

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Native Components

USA . 780 parts In-Stock

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$24.380

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780

$24.380

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$24.391

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$22.196

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$20.001

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2,500

$24.391

$22.196

$20.001

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Northwest PG Solutions

USA . 1,473 parts In-Stock

1+ parts

$26.818

100+ parts

$24.136

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1,473

$26.818

$24.136

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Component Stockers USA

USA . 765 parts In-Stock

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$99.990

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765

$99.990

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Metaverse IC Inc.

Canada . 60,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,307 parts In-Stock

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TANS Electronics

Latvia . 7,226 parts In-Stock

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Microchip USA

USA . 4,360 parts In-Stock

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4,360

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SupplyDigital Components

Austria . 3,771 parts In-Stock

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Problanco Electronics

Mexico . 3,437 parts In-Stock

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Corphita

USA . 1,946 parts In-Stock

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Kulean Microsystems

USA . 1,432 parts In-Stock

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UHIMA Technologies

Türkiye . 375 parts In-Stock

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375

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Overview

Unleash the power of innovation with the CAX810ZTBI-T3 by Onsemi. As a leading manufacturer in the industry of Power Management ICs, Onsemi delivers top-quality products that exceed expectations. This small outline, low profile IC is perfect for various applications, providing efficient power supply support. With a wide operating temperature range and industrial-grade design, this product ensures reliable performance in any environment. Experience the value and benefits of the CAX810ZTBI-T3 and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability to the package, ensuring long-term performance of the Power Management IC.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation of the IC onto circuit boards, saving time and effort during production.

Nominal Supply Voltage (Vsup): 2.5 V

Optimal supply voltage of 2.5V ensures efficient power management and stable operation of the device within specified voltage range.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85 °C ensures reliable performance even under extreme conditions, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Wide operating temperature range from -40 °C to 85°C allows for operation in both cold and hot environments, increasing versatility of the IC.

Width (mm): 1.3 mm

Compact width of 1.3mm makes the IC suitable for space-constrained applications where size is a critical factor.

Terminal Form: GULL WING

Gull wing terminal form offers secure connection and easy soldering onto the circuit board, ensuring reliable electrical contact.

Maximum Supply Voltage (Vsup): 5.5 V

High maximum supply voltage of 5.5V allows for compatibility with a wide range of power sources, making it versatile for different system configurations.

Technical Specifications

Power Management ICs CAX810ZTBI-T3 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.32V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Length:

2.92 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.22 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.32V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.3 mm

Trade Compliance

CAX810ZTBI-T3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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