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CAX809MTBI-T3

Onsemi

CAX809MTBI-T3 by Onsemi

CAX809MTBI-T3 by Onsemi is a Power Management IC with 5V Nominal Voltage, -40 to 85 °C Operating Temperature Range, and Gull Wing Terminal Form. It is used in industrial applications for power supply support circuits due to its small outline package style and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,217 parts In-Stock

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Digiode

USA . 1,060 parts In-Stock

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1,060

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Distributors (Availability)

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Corohmni

South Africa . 217 parts In-Stock

1+ parts

$18.019

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217

$18.019

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AZTECH Wire

Italy . 165 parts In-Stock

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$20.130

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165

$20.130

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$25.389

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$23.104

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$20.819

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5,000

$25.389

$23.104

$20.819

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Kulean Microsystems

USA . 7,809 parts In-Stock

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7,809

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Problanco Electronics

Mexico . 6,992 parts In-Stock

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6,992

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Northwest PG Solutions

USA . 1,586 parts In-Stock

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$3.350

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1,586

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$3.350

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TANS Electronics

Latvia . 781 parts In-Stock

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Native Components

USA . 743 parts In-Stock

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$3.316

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743

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$3.316

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UHIMA Technologies

Türkiye . 577 parts In-Stock

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577

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SupplyDigital Components

Austria . 332 parts In-Stock

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332

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Microchip USA

USA . 318 parts In-Stock

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Corphita

USA . 115 parts In-Stock

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Overview

Enhance your power management solutions with the CAX809MTBI-T3 by Onsemi. Crafted with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Suitable for industrial applications, this product boasts a small outline, low profile package style with dual terminal position. With a nominal supply voltage of 5V and a wide operating temperature range, this IC ensures optimal performance in any environment. Trust Onsemi to deliver cutting-edge technology that empowers your devices to perform at their best. Elevate your power management capabilities with the CAX809MTBI-T3 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the power management IC.

Surface Mount: YES

Enables easy installation onto circuit boards for efficient usage of space.

Nominal Supply Voltage (Vsup): 5 V

Suitable for a wide range of applications that require a stable 5V power source.

No. of Terminals: 3

Simplifies the wiring and connectivity process for the power management IC.

Maximum Operating Temperature: 85 °C

Ensures reliable performance even in high-temperature environments.

Terminal Finish: Tin (Sn)

Enhances conductivity and corrosion resistance for efficient power distribution.

Width (mm): 1.3 mm

Compact size allows for easy integration into various electronic devices.

Minimum Supply Voltage (Vsup): 1.2 V

Provides flexibility for applications that require lower voltage input.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments with consistent performance.

Terminal Pitch: 0.95 mm

Facilitates precise connection to other components on the circuit board.

Maximum Supply Voltage (Vsup): 5.5 V

Offers a safety margin for voltage spikes or fluctuations in the power supply.

Technical Specifications

Power Management ICs CAX809MTBI-T3 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 4.38V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Length:

2.92 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.22 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+4.38V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.3 mm

Trade Compliance

CAX809MTBI-T3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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