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CAT28F010TR-12

Onsemi

CAT28F010TR-12 by Onsemi

CAT28F010TR-12 by Onsemi is a 128Kx8 NOR Flash Memory with 100000 Write/Erase Cycles. It operates at 5V, has a programming voltage of 12V, and offers fast access time of 120ns. Ideal for commercial applications requiring reliable non-volatile memory storage in small outline packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Digiode

USA . 592 parts In-Stock

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Vyrian

USA . 25 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 898 parts In-Stock

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$5.350

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898

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Kulean Microsystems

USA . 6,720 parts In-Stock

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TANS Electronics

Latvia . 4,908 parts In-Stock

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Problanco Electronics

Mexico . 4,517 parts In-Stock

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Corphita

USA . 1,074 parts In-Stock

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SupplyDigital Components

Austria . 746 parts In-Stock

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746

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Northwest PG Solutions

USA . 455 parts In-Stock

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$5.243

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Corohmni

South Africa . 367 parts In-Stock

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UHIMA Technologies

Türkiye . 3 parts In-Stock

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Overview

Experience top-notch quality and reliability with the CAT28F010TR-12 Flash Memory by Onsemi. As a leading manufacturer in the industry, Onsemi ensures unmatched performance and durability in their products. Ideal for a wide range of applications, this flash memory offers customers exceptional value with its fast access time, high endurance, and versatile programming interface. Upgrade your systems with the CAT28F010TR-12 and enjoy the benefits of seamless operation and enhanced efficiency. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the flash memory component inside, ensuring long-term reliability.

Surface Mount: YES

Allows for easy installation on a circuit board, saving space and reducing assembly time.

Operating Mode: ASYNCHRONOUS

Enables independent operation without being synchronized to a clock signal, offering flexibility in different system configurations.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with a wide range of electronic devices and systems.

No. of Words: 131072 words

With a large word capacity, this flash memory can store and access a significant amount of data, making it suitable for various applications.

Endurance: 100000 Write/Erase Cycles

High endurance rating ensures reliable and long-lasting performance for frequent write and erase operations.

Maximum Access Time: 120 ns

Fast access time allows for quick data retrieval, enhancing the overall performance of the flash memory.

Technical Specifications

Flash Memory CAT28F010TR-12 attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

Length:

18.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Reverse Pinout:

YES

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

CAT28F010TR-12 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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