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2SD1207S-AE

Onsemi

2SD1207S-AE by Onsemi

The Onsemi 2SD1207S-AE is a NPN BJT transistor with hFE of 140, VCE of 50V, and IC of 2A. Ideal for switching applications due to its high transition frequency of 150MHz. Its cylindrical package with through-hole terminals makes it easy to integrate into various electronic circuits.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 105,079 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

105,079

-

$0.225

$0.186

$0.166

DigiKey

USA . 105,079 parts In-Stock

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$0.280

105,079

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$0.280

Verical

USA . 66,028 parts In-Stock

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$0.208

66,028

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$0.208

Distributors (In-Stock)

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Digiode

USA . 2,059 parts In-Stock

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$0.175

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2,059

$0.175

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Vyrian

USA . 683 parts In-Stock

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$0.184

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683

$0.184

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DigiKey Marketplace

USA . 106,834 parts In-Stock

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106,834

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Chip Stock

USA . 64,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,571 parts In-Stock

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$0.166

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$0.166

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Corohmni

South Africa . 151 parts In-Stock

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$0.180

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151

$0.180

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Component Stockers USA

USA . 105 parts In-Stock

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$0.190

100+ parts

$0.180

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$0.160

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$0.160

105

$0.190

$0.180

$0.160

$0.160

Native Components

USA . 549 parts In-Stock

1+ parts

$0.336

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$0.323

549

$0.336

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$0.323

Northwest PG Solutions

USA . 1,919 parts In-Stock

1+ parts

$0.370

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$0.326

1,919

$0.370

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$0.326

QUARKTWIN TECHNOLOGY LTD

USA . 20,649 parts In-Stock

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TANS Electronics

Latvia . 7,077 parts In-Stock

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Kulean Microsystems

USA . 6,724 parts In-Stock

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SupplyDigital Components

Austria . 4,302 parts In-Stock

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Microchip USA

USA . 3,978 parts In-Stock

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Perfect Parts

USA . 3,516 parts In-Stock

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UHIMA Technologies

Türkiye . 660 parts In-Stock

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660

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Problanco Electronics

Mexico . 615 parts In-Stock

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615

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Continental Prestige Electronics

USA . 84 parts In-Stock

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$0.166

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84

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$0.166

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Overview

Enhance your electronic projects with the high-quality 2SD1207S-AE Small Signal Bipolar Junction Transistor from Onsemi. Designed for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 50V and a maximum collector current of 2A. With a minimum DC current gain of 140 and a nominal transition frequency of 150MHz, this transistor provides reliable performance in a variety of applications. Trust in Onsemi's reputation for excellence and innovation to bring value and efficiency to your next project with the 2SD1207S-AE transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection to the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits due to their ease of use and flexibility.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in application.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it suitable for various electronic circuits that require on/off control.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and stability in circuit assembly.

No. of Terminals: 3

Having 3 terminals allows for specific connections to be made easily in the circuit layout.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers efficient use of space and ease of handling during installation.

Minimum DC Current Gain (hFE): 140

A minimum DC current gain of 140 ensures reliable and consistent amplification in circuits.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle moderate voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and efficiency in electronic applications.

Maximum Collector Current (IC): 2 A

Capable of handling a maximum collector current of 2A, making it suitable for medium power applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The terminal finish of tin/copper/silver/nickel provides excellent conductivity and corrosion resistance.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and secure mounting on circuit boards.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency of 150MHz enables fast switching speeds in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1207S-AE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1207S-AE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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