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1PMT40AT1

Onsemi

1PMT40AT1 by Onsemi

1PMT40AT1 by Onsemi is a Zener diode with a breakdown voltage of 40V, ideal for transient suppression. It has a max power dissipation of 0.5W and can handle non-repetitive peak reverse power up to 175W. This single-configured device in a small outline package is suitable for surface mount applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 75,000 parts In-Stock

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Vyrian

USA . 11,625 parts In-Stock

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Digiode

USA . 2,379 parts In-Stock

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2,379

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Corohmni

South Africa . 453 parts In-Stock

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$0.042

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453

$0.042

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Northwest PG Solutions

USA . 1,683 parts In-Stock

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$3.190

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1,683

$3.190

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AZTECH Wire

Italy . 564 parts In-Stock

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$14.680

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564

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Kulean Microsystems

USA . 7,794 parts In-Stock

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Problanco Electronics

Mexico . 5,436 parts In-Stock

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Corphita

USA . 2,299 parts In-Stock

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TANS Electronics

Latvia . 1,022 parts In-Stock

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SupplyDigital Components

Austria . 1,011 parts In-Stock

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Native Components

USA . 925 parts In-Stock

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$2.813

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UHIMA Technologies

Türkiye . 413 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the reliable 1PMT40AT1 by Onsemi. Manufactured with top-notch quality and expertise, this Transient Suppression Device is a game-changer in safeguarding against voltage spikes and surges. Perfect for a wide range of applications, this product offers exceptional value by ensuring the longevity and performance of your equipment. Say goodbye to worries about power fluctuations and hello to peace of mind with the 1PMT40AT1. Trust Onsemi to deliver the best in technology and protection for your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the device, making it suitable for various applications.

Working Test Current: 1 mA

The low working test current of 1 mA indicates efficient performance and reliable operation of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 175 W

High peak reverse power dissipation capability allows the device to handle large transient power surges effectively, protecting the circuitry.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this device can withstand harsh environmental conditions and extended usage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor diode type ensures efficient suppression of transient voltages, safeguarding sensitive components in the circuit.

Nominal Reference Voltage: 40 V

The nominal reference voltage of 40V ensures precise regulation and protection against voltage spikes, enhancing the overall performance of the device.

Technical Specifications

Transient Suppression Devices 1PMT40AT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

49.1 V

Minimum Breakdown Voltage:

44.4 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

175 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

40 V

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

1 mA

Trade Compliance

1PMT40AT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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