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1PMT16AT3

Onsemi

1PMT16AT3 by Onsemi

1PMT16AT3 by Onsemi is a Zener diode with 16V breakdown voltage, 200W peak power dissipation, and 1mA test current. Ideal for transient suppression in electronics due to its unidirectional polarity and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 16,000 parts In-Stock

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Vyrian

USA . 5,337 parts In-Stock

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Digiode

USA . 2,116 parts In-Stock

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AZTECH Wire

Italy . 108 parts In-Stock

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$16.350

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Problanco Electronics

Mexico . 8,260 parts In-Stock

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Kulean Microsystems

USA . 6,413 parts In-Stock

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SupplyDigital Components

Austria . 5,197 parts In-Stock

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Corphita

USA . 2,219 parts In-Stock

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TANS Electronics

Latvia . 1,061 parts In-Stock

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Northwest PG Solutions

USA . 930 parts In-Stock

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UHIMA Technologies

Türkiye . 725 parts In-Stock

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Native Components

USA . 417 parts In-Stock

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Corohmni

South Africa . 139 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the 1PMT16AT3 by Onsemi, a leading manufacturer in the industry of Transient Suppression Devices. Designed to protect your electronic devices from voltage spikes, this product offers peace of mind and assurance for a wide range of applications. With its high performance capabilities and superior design, customers can trust in the value and benefits that this product brings. Upgrade your protection today with the 1PMT16AT3 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to environmental factors, making the product suitable for a variety of applications.

Working Test Current: 1 mA

With a working test current of 1 mA, this product offers efficient performance and reliability in protecting against transient voltage spikes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

The high maximum non-repetitive peak reverse power dissipation of 200 W ensures effective suppression of transient overvoltage events, safeguarding connected electronics.

Surface Mount: YES

The surface-mount capability allows for easy and secure installation of the device on circuit boards, saving space and facilitating assembly.

Maximum Voltage Tolerance: 5%

The tight maximum voltage tolerance of 5% ensures accurate protection against overvoltage conditions, enhancing the overall performance of the product.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this product can withstand elevated temperatures in various applications, ensuring reliability under challenging conditions.

Technical Specifications

Transient Suppression Devices 1PMT16AT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

19.7 V

Minimum Breakdown Voltage:

17.8 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

16 V

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

1 mA

Trade Compliance

1PMT16AT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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