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1PMT16AT1

Onsemi

1PMT16AT1 by Onsemi

1PMT16AT1 by Onsemi is a Zener diode with 16V breakdown voltage, ideal for transient suppression. It has a max power dissipation of 0.5W and can handle non-repetitive peak reverse power up to 200W. This single-configured device in a small outline package is suitable for surface mount applications.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 186 parts In-Stock

1+ parts

-

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$0.172

1k+ parts

$0.143

10k+ parts

$0.127

186

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$0.172

$0.143

$0.127

Distributors (In-Stock)

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Digiode

USA . 615 parts In-Stock

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$0.134

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615

$0.134

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Chip Stock

USA . 57,000 parts In-Stock

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Vyrian

USA . 8,895 parts In-Stock

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Sunrise Surplus Inc.

USA . 1,892 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,552 parts In-Stock

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$0.127

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Component Stockers USA

USA . 125 parts In-Stock

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$0.140

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$0.140

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125

$0.140

$0.140

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Corohmni

South Africa . 277 parts In-Stock

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$0.141

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277

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Andel Nordic

Denmark . 390 parts In-Stock

1+ parts

$0.880

100+ parts

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1k+ parts

$0.613

10k+ parts

$0.613

390

$0.880

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$0.613

$0.613

AZTECH Wire

Italy . 633 parts In-Stock

1+ parts

$10.140

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633

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Problanco Electronics

Mexico . 7,699 parts In-Stock

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Kulean Microsystems

USA . 5,686 parts In-Stock

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TANS Electronics

Latvia . 3,369 parts In-Stock

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SupplyDigital Components

Austria . 2,483 parts In-Stock

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Northwest PG Solutions

USA . 1,803 parts In-Stock

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UHIMA Technologies

Türkiye . 123 parts In-Stock

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Native Components

USA . 88 parts In-Stock

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Overview

Enhance your electronic devices with the reliable 1PMT16AT1 transient suppression device from Onsemi. Manufactured with top-quality materials and advanced technology, this ZENER diode provides maximum protection against voltage spikes, ensuring optimal performance and longevity of your circuits. Ideal for a wide range of applications, this diode offers a cost-effective solution to safeguard your electronics while maintaining high efficiency. Trust Onsemi to deliver exceptional quality and value with the 1PMT16AT1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material offers good durability and protection for the internal components of the device, ensuring long-term reliability.

Working Test Current: 1 mA

Low working test current allows for efficient protection against transient surges without causing any interference with normal circuit operation.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

High peak power dissipation capacity ensures that the device can handle sudden surge spikes effectively, protecting the connected equipment.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the device to be used in various environmental conditions without compromising performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type ensures efficient clamping and suppression of transient voltages, safeguarding sensitive circuits from damage.

Technical Specifications

Transient Suppression Devices 1PMT16AT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

19.7 V

Minimum Breakdown Voltage:

17.8 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

16 V

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

1 mA

Trade Compliance

1PMT16AT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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