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1PMT12AT3G

Onsemi

1PMT12AT3G by Onsemi

1PMT12AT3G by Onsemi is a Zener diode with 12V breakdown voltage, 200W power dissipation, and 1mA test current. It is used for transient suppression in electronics, offering unidirectional protection against voltage spikes. This surface-mount device has a small outline package ideal for compact applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 37,000 parts In-Stock

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Digiode

USA . 2,155 parts In-Stock

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2,155

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Vyrian

USA . 1,184 parts In-Stock

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NAC Semi

USA . 960 parts In-Stock

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960

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Distributors (Availability)

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Native Components

USA . 899 parts In-Stock

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$0.105

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$0.101

899

$0.105

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$0.101

Northwest PG Solutions

USA . 3,677 parts In-Stock

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$0.116

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$0.102

3,677

$0.116

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$0.102

Kulean Microsystems

USA . 6,723 parts In-Stock

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6,723

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TANS Electronics

Latvia . 2,970 parts In-Stock

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2,970

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Corphita

USA . 2,490 parts In-Stock

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2,490

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SupplyDigital Components

Austria . 2,081 parts In-Stock

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Problanco Electronics

Mexico . 1,982 parts In-Stock

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UHIMA Technologies

Türkiye . 979 parts In-Stock

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Corohmni

South Africa . 94 parts In-Stock

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Overview

Discover the superior quality and reliability of the 1PMT12AT3G by Onsemi, a leading manufacturer in the industry. As a top choice in Transient Suppression Devices, this product offers unmatched protection against voltage spikes and surges. Perfect for a wide range of applications, this device ensures the safety and longevity of your electronic systems. With a nominal reference voltage of 12V and a maximum power dissipation of 0.5W, the 1PMT12AT3G provides exceptional value and performance for all your protection needs. Trust Onsemi for top-of-the-line solutions that deliver peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the device, ensuring a longer lifespan.

Working Test Current: 1 mA

The low test current allows for efficient and effective testing of the device without risking damage.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

This high power dissipation capability means the device can handle sudden spikes in power without getting damaged.

No. of Terminals: 2

The simple design with 2 terminals makes it easy to install and use in various applications.

Maximum Voltage Tolerance: 5%

The tight tolerance ensures accurate and reliable performance in regulating voltage levels.

Technology: ZENER

Zener technology provides precise voltage regulation, making this device suitable for sensitive electronics.

Technical Specifications

Transient Suppression Devices 1PMT12AT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

14.7 V

Minimum Breakdown Voltage:

13.3 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

1 mA

Trade Compliance

1PMT12AT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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