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1PMT22AT1G

Onsemi

1PMT22AT1G by Onsemi

1PMT22AT1G by Onsemi is a Zener diode with 22V breakdown voltage, 200W power dissipation, and 5% voltage tolerance. It is used for transient suppression in electronics, offering unidirectional protection at 150 °C operating temperature.

Median Price

$2.230

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 3,160 parts In-Stock

1+ parts

$2.230

100+ parts

$0.466

1k+ parts

$0.292

10k+ parts

-

3,160

$2.230

$0.466

$0.292

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,416 parts In-Stock

1+ parts

$2.118

100+ parts

-

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2,416

$2.118

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-

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Vyrian

USA . 852 parts In-Stock

1+ parts

$2.230

100+ parts

-

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852

$2.230

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Chip Stock

USA . 67,000 parts In-Stock

1+ parts

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67,000

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Flip Electronics

USA . 3,200 parts In-Stock

1+ parts

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3,200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 906 parts In-Stock

1+ parts

$2.007

100+ parts

-

1k+ parts

-

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906

$2.007

-

-

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Corohmni

South Africa . 133 parts In-Stock

1+ parts

$2.230

100+ parts

-

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133

$2.230

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Native Components

USA . 1,360 parts In-Stock

1+ parts

$5.115

100+ parts

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1,360

$5.115

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Perfect Parts

USA . 21,547 parts In-Stock

1+ parts

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21,547

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Kepictronics

USA . 8,471 parts In-Stock

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8,471

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Kulean Microsystems

USA . 8,197 parts In-Stock

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8,197

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Problanco Electronics

Mexico . 8,188 parts In-Stock

1+ parts

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8,188

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TANS Electronics

Latvia . 8,016 parts In-Stock

1+ parts

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8,016

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Northwest PG Solutions

USA . 3,639 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$5.013

10k+ parts

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3,639

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-

$5.013

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Authorized Procurement Solutions

USA . 3,160 parts In-Stock

1+ parts

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100+ parts

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3,160

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GreenTree Electronics

Israel . 3,160 parts In-Stock

1+ parts

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3,160

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SupplyDigital Components

Austria . 934 parts In-Stock

1+ parts

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934

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UHIMA Technologies

Türkiye . 61 parts In-Stock

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61

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Overview

Enhance the protection of your electronic devices with the 1PMT22AT1G by Onsemi. Manufactured by a trusted industry leader, this transient suppression device offers unmatched reliability and quality. Ideal for a variety of applications, this product ensures your equipment is safeguarded from voltage spikes and surges. With its Zener technology and high breakdown voltage, the 1PMT22AT1G provides peace of mind and long-lasting protection for your valuable electronics. Trust Onsemi to deliver top-notch performance and durability in every product they create.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Working Test Current: 1 mA

Allows for testing the functionality of the device with a safe current level.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

Can handle high power surges and protect connected devices from damage.

Maximum Operating Temperature: 150 °C

Can operate effectively in high temperature environments, providing reliable protection in various conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes special diode technology to efficiently suppress transient voltage spikes and protect connected equipment.

Technical Specifications

Transient Suppression Devices 1PMT22AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

26.9 V

Minimum Breakdown Voltage:

24.4 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

22 V

Maximum Repetitive Peak Reverse Voltage:

22 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

1 mA

Trade Compliance

1PMT22AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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