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1PMT24AT1G

Onsemi

1PMT24AT1G by Onsemi

1PMT24AT1G by Onsemi is a Zener diode with 24V breakdown voltage, 200W peak power dissipation, and 5% voltage tolerance. It is used for transient suppression in electronics, offering unidirectional polarity and Gull Wing terminal form for surface mount applications.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,454 parts In-Stock

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Vyrian

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Northwest PG Solutions

USA . 2,000 parts In-Stock

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$9.587

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$8.628

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Native Components

USA . 512 parts In-Stock

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$63.342

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$60.809

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SupplyDigital Components

Austria . 7,089 parts In-Stock

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TANS Electronics

Latvia . 5,530 parts In-Stock

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Kulean Microsystems

USA . 5,481 parts In-Stock

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Kepictronics

USA . 5,476 parts In-Stock

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Problanco Electronics

Mexico . 2,911 parts In-Stock

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Corphita

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Corohmni

South Africa . 450 parts In-Stock

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UHIMA Technologies

Türkiye . 292 parts In-Stock

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Overview

Experience the superior quality and reliability of the 1PMT24AT1G by Onsemi, a leading manufacturer of Transient Suppression Devices. This small outline rectagular package offers a nominal reference voltage of 24V with a maximum breakdown voltage of 29.5V, making it ideal for a wide range of applications. With a maximum non repetitive peak reverse power dissipation of 200W, this Zener diode provides excellent protection against voltage surges. Trust in Onsemi to deliver high-performance solutions that offer value, benefits, and peace of mind to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, ensuring longevity and ease of handling.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

With a high power dissipation capability, this device can effectively handle sudden surges or spikes in voltage, providing reliable protection to connected equipment.

Maximum Operating Temperature: 150 °C

The device can operate efficiently at high temperatures, making it suitable for a wide range of applications in different environments.

Minimum Breakdown Voltage: 26.7 V

The low breakdown voltage ensures that the device activates quickly when voltage exceeds the threshold, effectively suppressing transient spikes to protect connected components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Trans Voltage Suppressor diode ensures effective transient voltage suppression, safeguarding connected devices against voltage spikes and surges.

Technical Specifications

Transient Suppression Devices 1PMT24AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

29.5 V

Minimum Breakdown Voltage:

26.7 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PSSO-G1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Nominal Reference Voltage:

24 V

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

1 mA

Trade Compliance

1PMT24AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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