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1PMT18AT1G

Onsemi

1PMT18AT1G by Onsemi

1PMT18AT1G by Onsemi is a Zener diode with 18V breakdown voltage, ideal for transient suppression. It has a max power dissipation of 0.5W and can handle up to 200W peak reverse power. This single-configured device is suitable for surface mount applications in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,701 parts In-Stock

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Digiode

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TANS Electronics

Latvia . 6,684 parts In-Stock

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SupplyDigital Components

Austria . 3,177 parts In-Stock

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Kulean Microsystems

USA . 2,575 parts In-Stock

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Northwest PG Solutions

USA . 934 parts In-Stock

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UHIMA Technologies

Türkiye . 847 parts In-Stock

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Native Components

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Corphita

USA . 525 parts In-Stock

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Corohmni

South Africa . 389 parts In-Stock

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Problanco Electronics

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Overview

Experience the unmatched quality and reliability of Onsemi with the 1PMT18AT1G transient suppression device. This product, designed for superior protection against voltage spikes, offers peace of mind for a wide range of applications. From industrial equipment to consumer electronics, this Zener diode technology ensures optimal performance in challenging conditions. Trust Onsemi's expertise and innovation to safeguard your devices and keep them running smoothly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and ensures protection against external elements, making the product suitable for a wide range of applications.

Working Test Current: 1 mA

The working test current of 1 mA indicates the reliability and efficiency of the product in suppressing transient surges within the specified current range.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

With a high maximum non-repetitive peak reverse power dissipation of 200 W, the product can effectively handle transient spikes and protect the connected circuits from damage.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the product's performance and stability even under extreme temperature conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Trans Voltage Suppressor Diode ensures efficient suppression of transient voltage spikes and maintains the integrity of the connected circuits.

Nominal Reference Voltage: 18 V

The nominal reference voltage of 18 V indicates the specific voltage level at which the device starts conducting to suppress transient surges, providing reliable protection to the circuits.

Technical Specifications

Transient Suppression Devices 1PMT18AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

22.1 V

Minimum Breakdown Voltage:

20 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PSSO-G1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Nominal Reference Voltage:

18 V

Maximum Repetitive Peak Reverse Voltage:

18 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

4.8 %

Working Test Current:

1 mA

Trade Compliance

1PMT18AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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