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1PMT18AT3G

Onsemi

1PMT18AT3G by Onsemi

1PMT18AT3G by Onsemi is a Zener diode with 18V breakdown voltage, 1000W power dissipation, and 4.8% voltage tolerance. It is used for transient suppression in electronics to protect against voltage spikes and surges.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,239 parts In-Stock

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Vyrian

USA . 1,672 parts In-Stock

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1,672

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Distributors (Availability)

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Native Components

USA . 961 parts In-Stock

1+ parts

$8.760

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961

$8.760

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Northwest PG Solutions

USA . 3,359 parts In-Stock

1+ parts

$18.758

100+ parts

$16.882

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3,359

$18.758

$16.882

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Kulean Microsystems

USA . 6,212 parts In-Stock

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6,212

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TANS Electronics

Latvia . 3,666 parts In-Stock

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3,666

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Problanco Electronics

Mexico . 3,117 parts In-Stock

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3,117

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SupplyDigital Components

Austria . 2,195 parts In-Stock

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2,195

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UHIMA Technologies

Türkiye . 810 parts In-Stock

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810

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Corphita

USA . 385 parts In-Stock

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Corohmni

South Africa . 130 parts In-Stock

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Overview

Transform your electronics with the 1PMT18AT3G by Onsemi. Crafted with precision and expertise, this Transient Suppression Device offers unparalleled protection and performance. From surge protection to voltage regulation, this product ensures your devices stay safe and reliable. Whether you're in automotive, industrial, or consumer electronics, this Zener diode is a game-changer. Experience the quality and innovation that Onsemi brings to every component, elevating your products to new heights. Upgrade your devices today with the 1PMT18AT3G and discover the difference it makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, making the product long-lasting and reliable.

Working Test Current: 1 mA

Ideal for low current applications, ensuring efficient and effective transient suppression.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

Capable of handling high power surges, offering excellent protection for sensitive electronic devices.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Minimum Breakdown Voltage: 20 V

Provides reliable protection by clamping down voltages above this threshold, preventing damage to connected devices.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, ensuring effective and precise voltage regulation.

Technical Specifications

Transient Suppression Devices 1PMT18AT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

22.1 V

Minimum Breakdown Voltage:

20 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PDSO-G2

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

18 V

Maximum Repetitive Peak Reverse Voltage:

18 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

4.8 %

Working Test Current:

1 mA

Trade Compliance

1PMT18AT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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