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1PMT12AT1G

Onsemi

1PMT12AT1G by Onsemi

1PMT12AT1G by Onsemi is a Zener diode with 12V breakdown voltage, ideal for transient suppression. It has a max power dissipation of 0.5W and can handle non-repetitive peak reverse power up to 200W. With a small outline package style, it is suitable for surface mount applications in various electronic circuits.

Median Price

$0.174

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

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$0.174

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Chip Stock

USA . 66,000 parts In-Stock

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Digiode

USA . 694 parts In-Stock

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Vyrian

USA . 619 parts In-Stock

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NAC Semi

USA . 88 parts In-Stock

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VNN

France . 75 parts In-Stock

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Prism Electronics

USA . 12 parts In-Stock

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12

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,054 parts In-Stock

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$0.010

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$0.010

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Corohmni

South Africa . 461 parts In-Stock

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$0.171

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Argo Parts USA

USA . 1,112 parts In-Stock

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$0.169

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Continental Prestige Electronics

USA . 73 parts In-Stock

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$0.174

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73

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AZTECH Wire

Italy . 619 parts In-Stock

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$15.136

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Component Stockers USA

USA . 730 parts In-Stock

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$99.990

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Perfect Parts

USA . 60,001 parts In-Stock

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Kulean Microsystems

USA . 6,689 parts In-Stock

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Problanco Electronics

Mexico . 5,647 parts In-Stock

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TANS Electronics

Latvia . 4,022 parts In-Stock

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SupplyDigital Components

Austria . 3,481 parts In-Stock

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Assy Fe

Spain . 2,084 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Corphita

USA . 665 parts In-Stock

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UHIMA Technologies

Türkiye . 484 parts In-Stock

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ChipstoGo Electronic ltd

UK . 85 parts In-Stock

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Overview

Protect your electronic devices with the reliable 1PMT12AT1G transient suppression device from Onsemi. Designed to provide a high level of quality and performance, this product offers customers peace of mind knowing their equipment is safeguarded against voltage spikes and surges. With a compact design and easy installation, the 1PMT12AT1G is ideal for a wide range of applications, including automotive, industrial, and consumer electronics. Trust Onsemi to deliver innovative solutions that prioritize safety and efficiency in every use case.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the device, making it suitable for various industrial and electronic applications.

Working Test Current: 1 mA

The low working test current ensures efficient usage and minimal power consumption.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

High power dissipation capability allows the device to handle surges and protect connected equipment effectively.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this device can withstand harsh environmental conditions without compromising performance.

Technology: ZENER

Zener technology ensures stable and reliable voltage regulation, making it ideal for transient suppression applications.

Technical Specifications

Transient Suppression Devices 1PMT12AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

14.7 V

Minimum Breakdown Voltage:

13.3 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

1 mA

Trade Compliance

1PMT12AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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