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1PMT18AT1

Onsemi

1PMT18AT1 by Onsemi

1PMT18AT1 by Onsemi is a Zener diode with 18V nominal reference voltage, ideal for transient suppression. It has a max power dissipation of 0.5W and can handle up to 200W peak reverse power dissipation. With a breakdown voltage of 22.1V, it is suitable for applications requiring protection against voltage spikes in electronic circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 26,000 parts In-Stock

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Vyrian

USA . 12,987 parts In-Stock

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Digiode

USA . 2,391 parts In-Stock

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Native Components

USA . 388 parts In-Stock

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$5.695

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AZTECH Wire

Italy . 745 parts In-Stock

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$15.330

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Component Stockers USA

USA . 350 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 7,998 parts In-Stock

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Kulean Microsystems

USA . 4,430 parts In-Stock

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TANS Electronics

Latvia . 3,880 parts In-Stock

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Corphita

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Northwest PG Solutions

USA . 942 parts In-Stock

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UHIMA Technologies

Türkiye . 525 parts In-Stock

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Overview

Looking for reliable protection against transient voltage spikes? Look no further than the 1PMT18AT1 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in their products. The 1PMT18AT1 is a Transient Suppression Device that provides peace of mind in various applications. With its high power dissipation and Zener technology, this diode offers superior voltage tolerance and breakdown voltage. Protect your electronics with the 1PMT18AT1 and experience the unmatched value and benefits it brings to your devices. Trust Onsemi for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for various applications.

Working Test Current: 1 mA

The low working test current ensures energy efficiency and helps in protecting the connected devices from transient voltages.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation, making it suitable for automated assembly processes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

The high peak reverse power dissipation rating ensures the product can handle sudden surges or spikes in voltage effectively.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range makes this product suitable for use in a wide range of environments with varying temperatures.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, ensuring reliable connections.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode ensures efficient suppression of transient voltages, protecting connected devices from damage.

Technology: ZENER

The Zener technology used in this product allows for precise voltage regulation and protection against voltage spikes, ensuring stable operation of connected devices.

Maximum Repetitive Peak Reverse Voltage: 18 V

The maximum repetitive peak reverse voltage rating ensures that the product can effectively suppress transient voltages up to this voltage level.

Technical Specifications

Transient Suppression Devices 1PMT18AT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

22.1 V

Minimum Breakdown Voltage:

20 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

18 V

Maximum Repetitive Peak Reverse Voltage:

18 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

1 mA

Trade Compliance

1PMT18AT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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