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1PMT22AT3

Onsemi

1PMT22AT3 by Onsemi

1PMT22AT3 by Onsemi is a Zener diode with a breakdown voltage of 22V, ideal for transient suppression applications. It has a max power dissipation of 0.5W and can handle non-repetitive peak reverse power up to 200W. This single-configured device is designed for surface mount in small outline packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,184 parts In-Stock

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Vyrian

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Native Components

USA . 723 parts In-Stock

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$6.995

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Problanco Electronics

Mexico . 6,155 parts In-Stock

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Kulean Microsystems

USA . 2,484 parts In-Stock

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TANS Electronics

Latvia . 1,912 parts In-Stock

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Corphita

USA . 1,413 parts In-Stock

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UHIMA Technologies

Türkiye . 952 parts In-Stock

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Northwest PG Solutions

USA . 947 parts In-Stock

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Corohmni

South Africa . 419 parts In-Stock

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SupplyDigital Components

Austria . 9 parts In-Stock

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Overview

Discover the reliable protection and peace of mind that the 1PMT22AT3 by Onsemi offers. As a leading manufacturer in the industry, Onsemi delivers top-quality Transient Suppression Devices designed to safeguard your electronic components from voltage spikes and surges. With its Zener technology and 22V nominal reference voltage, this diode ensures optimal performance in a variety of applications. Trust in the expertise of Onsemi and invest in the value and benefits that the 1PMT22AT3 provides for your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for applications where weight and durability are important factors.

Working Test Current: 1 mA

The low working test current ensures efficient operation and minimizes power consumption, making it suitable for sensitive electronic equipment.

Surface Mount: YES

The surface mount capability allows for easy installation and integration into circuit boards, saving space and simplifying assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

The high maximum non repetitive peak reverse power dissipation ensures reliable protection against transient surges and overvoltage events.

Package Shape: SQUARE

The square package shape is compact and enables efficient use of board space, making it suitable for applications with limited space constraints.

Minimum Breakdown Voltage: 24.4 V

The high minimum breakdown voltage ensures effective protection against voltage spikes and surges, safeguarding connected equipment from damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode ensures efficient suppression of transient voltage spikes, providing reliable protection for sensitive electronic components.

Technical Specifications

Transient Suppression Devices 1PMT22AT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

26.9 V

Minimum Breakdown Voltage:

24.4 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

22 V

Maximum Repetitive Peak Reverse Voltage:

22 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

1 mA

Trade Compliance

1PMT22AT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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