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1PMT22AT3G

Onsemi

1PMT22AT3G by Onsemi

1PMT22AT3G by Onsemi is a Zener diode with a breakdown voltage range of 24.4-26.9V, ideal for transient suppression applications. It has a max power dissipation of 0.5W and can operate in temperatures from -55 to 150 °C. This single-configured device comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,397 parts In-Stock

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Digiode

USA . 846 parts In-Stock

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Native Components

USA . 1,139 parts In-Stock

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$31.020

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$29.779

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$29.779

TANS Electronics

Latvia . 5,958 parts In-Stock

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Problanco Electronics

Mexico . 4,667 parts In-Stock

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Kulean Microsystems

USA . 4,417 parts In-Stock

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Northwest PG Solutions

USA . 2,487 parts In-Stock

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Corohmni

South Africa . 395 parts In-Stock

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UHIMA Technologies

Türkiye . 385 parts In-Stock

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SupplyDigital Components

Austria . 298 parts In-Stock

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Corphita

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Overview

Looking for a reliable solution to protect your electronic devices from voltage spikes and surges? Look no further than the 1PMT22AT3G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance. This transient suppression device is perfect for various applications, providing peace of mind and safeguarding your valuable equipment. Say goodbye to potential damage and hello to uninterrupted operation with this high-value product. Trust Onsemi to deliver excellence with every purchase.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the device lightweight and durable, ensuring long-term reliability.

Working Test Current: 1 mA

The low working test current allows for efficient operation and helps in protecting sensitive electronic components from transient overvoltages.

Surface Mount: YES

Being surface mountable, the device is easy to install and saves space on the circuit board.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

With a high power dissipation capability, the device can effectively handle sudden spikes in voltage and protect connected devices.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the device to operate in a wide range of environments, making it versatile and reliable.

Minimum Breakdown Voltage: 24.4 V

The minimum breakdown voltage ensures that the device activates and diverts excess voltage away from sensitive components at the specified threshold.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode ensures effective suppression of transient voltage spikes and ensures the protection of connected electronics.

Nominal Reference Voltage: 22 V

The nominal reference voltage helps in accurately determining the voltage at which the device activates, providing precise protection against overvoltage events.

Technical Specifications

Transient Suppression Devices 1PMT22AT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

26.9 V

Minimum Breakdown Voltage:

24.4 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PDSO-G2

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

22 V

Maximum Repetitive Peak Reverse Voltage:

22 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

4.7 %

Working Test Current:

1 mA

Trade Compliance

1PMT22AT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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