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1PMT24AT3

Onsemi

1PMT24AT3 by Onsemi

1PMT24AT3 by Onsemi is a Zener diode with 24V breakdown voltage, 200W power dissipation, and 1mA test current. Ideal for transient suppression in electronics due to its unidirectional polarity and small outline package. Suitable for surface mount applications with a max operating temperature of 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,861 parts In-Stock

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Vyrian

USA . 1,831 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 25 parts In-Stock

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$8.665

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25

$8.665

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Northwest PG Solutions

USA . 1,448 parts In-Stock

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$9.531

100+ parts

$8.578

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$9.531

$8.578

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Problanco Electronics

Mexico . 3,679 parts In-Stock

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3,679

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SupplyDigital Components

Austria . 2,212 parts In-Stock

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Corphita

USA . 1,668 parts In-Stock

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Kulean Microsystems

USA . 1,037 parts In-Stock

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UHIMA Technologies

Türkiye . 563 parts In-Stock

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Corohmni

South Africa . 379 parts In-Stock

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TANS Electronics

Latvia . 159 parts In-Stock

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Overview

Discover the innovative 1PMT24AT3 by Onsemi, a top-of-the-line Transient Suppression Device designed to protect your valuable electronics from voltage surges. Manufactured with precision and expertise by Onsemi, this product offers superior performance and reliability in a compact package. Ideal for a wide range of applications, this Zener diode provides peace of mind by ensuring your devices are safeguarded against unexpected power fluctuations. Experience the quality and value that Onsemi brings to the table with the 1PMT24AT3, a must-have component for any electronic project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Working Test Current: 1 mA

The low working test current allows for efficient and effective suppression of transient voltage spikes, ensuring the safety of connected equipment.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

With a high power dissipation rating, this product can handle large spikes in voltage without damage, providing reliable protection for electronic devices.

Maximum Breakdown Voltage: 29.5 V

The high maximum breakdown voltage ensures that the device can effectively suppress voltage spikes up to this level, protecting connected equipment from damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode is specifically designed for transient suppression, providing effective protection against voltage spikes and surges.

Technical Specifications

Transient Suppression Devices 1PMT24AT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

29.5 V

Minimum Breakdown Voltage:

26.7 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

24 V

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

1 mA

Trade Compliance

1PMT24AT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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