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1PMT22AT1

Onsemi

1PMT22AT1 by Onsemi

1PMT22AT1 by Onsemi is a Zener diode with 22V nominal reference voltage, ideal for transient suppression. It has a max power dissipation of 0.5W and can handle up to 200W peak reverse power dissipation. With a breakdown voltage range of 24.4-26.9V, it is suitable for applications requiring protection against voltage spikes in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 20,000 parts In-Stock

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A&K Electronics

USA . 2,950 parts In-Stock

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Bristol Electronics

USA . 2,950 parts In-Stock

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Digiode

USA . 1,048 parts In-Stock

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Vyrian

USA . 194 parts In-Stock

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Native Components

USA . 162 parts In-Stock

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$7.005

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SupplyDigital Components

Austria . 3,171 parts In-Stock

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Problanco Electronics

Mexico . 2,634 parts In-Stock

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Northwest PG Solutions

USA . 2,265 parts In-Stock

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Kulean Microsystems

USA . 2,046 parts In-Stock

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Corphita

USA . 780 parts In-Stock

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UHIMA Technologies

Türkiye . 671 parts In-Stock

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TANS Electronics

Latvia . 555 parts In-Stock

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Corohmni

South Africa . 222 parts In-Stock

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Overview

Protect your electronic devices with the 1PMT22AT1 by Onsemi, a top-quality transient suppression device that offers reliable protection against voltage spikes. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications where safeguarding sensitive components is essential. With its high performance and durability, the 1PMT22AT1 provides peace of mind and ensures the longevity of your valuable equipment. Upgrade to this advanced technology today and experience the benefits firsthand!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the components inside, making the device durable and reliable.

Working Test Current: 1 mA

Low working test current ensures efficient operation and low power consumption of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

High power dissipation capability allows the device to handle sudden spikes in voltage effectively, protecting the circuit from damage.

Surface Mount: YES

Surface mount capability makes installation easy and convenient, especially for compact electronic systems.

Maximum Voltage Tolerance: 5 %

Tight voltage tolerance ensures precise voltage regulation and protection for connected devices.

Maximum Operating Temperature: 150 °C

High operating temperature range allows the device to function effectively in various environmental conditions.

Minimum Breakdown Voltage: 24.4 V

Higher breakdown voltage ensures effective suppression of voltage spikes and surges, protecting sensitive electronics.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode provides effective protection against transient overvoltage events, ensuring the safety of connected devices.

Technical Specifications

Transient Suppression Devices 1PMT22AT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

26.9 V

Minimum Breakdown Voltage:

24.4 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

22 V

Maximum Repetitive Peak Reverse Voltage:

22 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

1 mA

Trade Compliance

1PMT22AT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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