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APT65GP60J

Microsemi

APT65GP60J by Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 431 W; Maximum Collector Current (IC): 130 A; Terminal Form: UNSPECIFIED;

Median Price

$26.928

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 10 parts In-Stock

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$26.928

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Vyrian

USA . 889 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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Dan-Mar Components

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 118 parts In-Stock

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$1.160

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$2.031

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$1.848

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$1.665

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$2.031

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AZTECH Wire

Italy . 316 parts In-Stock

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$6.232

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Corohmni

South Africa . 235 parts In-Stock

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$31.528

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Semicontronic

India . 1,432 parts In-Stock

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$56.050

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$54.649

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$54.368

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Microchip USA

USA . 5,061 parts In-Stock

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$82.915

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Argo Parts USA

USA . 4,765 parts In-Stock

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Marpe Global Electronics

Taiwan . 3,668 parts In-Stock

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Glotronic Ltd.

UK . 3,300 parts In-Stock

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XL Components Corporation

Australia . 2,496 parts In-Stock

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QualityLine Systems

Poland . 2,127 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Continental Prestige Electronics

USA . 204 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT65GP60J attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

219 ns

Nominal Turn On Time (ton):

84 ns

Trade Compliance

APT65GP60J Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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