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APT65GP60J

Advanced Power Technology

APT65GP60J by Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 431 W; Maximum Collector Current (IC): 130 A; Package Style (Meter): FLANGE MOUNT;

Median Price

$26.928

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 10 parts In-Stock

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$26.928

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Vyrian

USA . 889 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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Dan-Mar Components

USA . 10 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 118 parts In-Stock

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$1.160

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$2.031

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$1.848

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$1.665

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$2.031

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AZTECH Wire

Italy . 316 parts In-Stock

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$6.232

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Corohmni

South Africa . 235 parts In-Stock

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$31.528

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Semicontronic

India . 1,432 parts In-Stock

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$56.050

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$54.649

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$54.368

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Microchip USA

USA . 5,061 parts In-Stock

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$82.915

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Argo Parts USA

USA . 4,765 parts In-Stock

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Marpe Global Electronics

Taiwan . 3,668 parts In-Stock

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Glotronic Ltd.

UK . 3,300 parts In-Stock

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XL Components Corporation

Australia . 2,496 parts In-Stock

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QualityLine Systems

Poland . 2,127 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Continental Prestige Electronics

USA . 204 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT65GP60J attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Advanced Power Technology

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

219 ns

Nominal Turn On Time (ton):

84 ns

Trade Compliance

APT65GP60J Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Advanced Power Technology

Established in 1990, Advanced Power Technology is a leading independent supplier of Energy Efficient Critical Power and Cooling Systems. We are experts in designing, building and supporting data centres, server rooms and comms rooms. We always strive to implement the most resilient, yet energy efficient solution. We provide initial consultation and specification, through to project implementation and beyond. We undertake projects of all sizes in all market sectors. We can advise and deliver the solution best suited to your needs whatever the circumstances dictate.

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