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MT35XU512ABA2G12-0AAT

Micron Technology

MT35XU512ABA2G12-0AAT by Micron Technology

Micron Technology's MT35XU512ABA2G12-0AAT is a 64MX8 flash memory with 67108864 words. Operating at 200 MHz, it has a supply voltage of 1.7-1.8V and temperature range of -40 to 105°C. Ideal for industrial applications requiring high-speed data storage in compact devices.

Median Price

$7.270

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,013 parts In-Stock

1+ parts

$6.780

100+ parts

$6.190

1k+ parts

-

10k+ parts

$6.180

1,013

$6.780

$6.190

-

$6.180

DigiKey

USA . 850 parts In-Stock

1+ parts

$7.760

100+ parts

$6.658

1k+ parts

$6.279

10k+ parts

$6.188

850

$7.760

$6.658

$6.279

$6.188

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,314 parts In-Stock

1+ parts

$6.441

100+ parts

-

1k+ parts

-

10k+ parts

-

2,314

$6.441

-

-

-

Vyrian

USA . 2,183 parts In-Stock

1+ parts

$6.780

100+ parts

-

1k+ parts

-

10k+ parts

-

2,183

$6.780

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 407 parts In-Stock

1+ parts

$6.102

100+ parts

-

1k+ parts

-

10k+ parts

-

407

$6.102

-

-

-

Overview

Unlock the power of advanced technology with Micron Technology's MT35XU512ABA2G12-0AAT Flash Memory. Designed with precision and quality in mind, this product offers unparalleled reliability and performance for a wide range of applications. Whether you're looking to enhance the speed and efficiency of your devices or improve overall system functionality, this Flash Memory is the ideal solution. Trust in Micron Technology's expertise and innovation to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product suitable for various applications.

Surface Mount: YES

Allows for easy installation on PCBs, saving time and effort during assembly.

Screening Level: AEC-Q100

Meets automotive industry standards for reliability and quality assurance.

Operating Mode: SYNCHRONOUS

Enhances data transfer efficiency by synchronizing signals and operations.

Nominal Supply Voltage / Vsup (V): 1.8

Efficient power consumption at the specified voltage level for optimized performance.

No. of Terminals: 24

Provides a sufficient number of connection points for seamless integration in electronic circuits.

Package Style (Meter): GRID ARRAY, THIN PROFILE

Space-saving design with a low profile for compact device layouts.

Maximum Operating Temperature: 105 °C

Ensures stable performance even in high-temperature environments.

Organization: 64MX8

Offers a high memory capacity organized in a convenient structure for data storage.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold conditions without compromising performance.

Terminal Finish: TIN SILVER COPPER

Provides superior conductivity and corrosion resistance for reliable electrical connections.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and maintenance accessibility.

Maximum Seated Height: 1.2 mm

Low-profile construction for space-efficient device designs.

Maximum Clock Frequency (fCLK): 200 MHz

Supports high-speed data processing capabilities for quick access to stored information.

Width: 6 mm

Compact form factor for versatile installation options in electronic devices.

Minimum Supply Voltage (Vsup): 1.7 V

Operates efficiently at a lower voltage range for energy savings.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering during assembly without compromising component integrity.

Peak Reflow Temperature °C: 260

Capable of withstanding high-temperature reflow processes for PCB assembly.

Length: 8 mm

Compact dimensions for space-constrained device designs.

Programming Voltage (V): 1.8

Optimal voltage level for programming memory operations efficiently.

Temperature Grade: INDUSTRIAL

Designed to operate reliably in industrial temperature ranges for diverse applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed performance.

Parallel or Serial: SERIAL

Serial data transfer mode for efficient and reliable communication with other components.

Terminal Form: BALL

Ball terminal form for easy soldering and secure electrical connections.

No. of Words: 67108864 words

Large memory capacity for storing a vast amount of data in the device.

Memory Width: 8

8-bit memory width for efficient data handling and processing capabilities.

Terminal Pitch: 1 mm

Optimal distance between terminals for easy PCB integration and layout design.

No. of Words Code: 64M

Indicates the code for the memory capacity, making it easy to identify and use.

Maximum Supply Voltage (Vsup): 2 V

Operates within a safe voltage range to prevent damage to the component.

Memory Density: 536870912 bit

High-density memory storage for efficient data storage and retrieval.

Memory IC Type: FLASH

Uses flash memory technology for non-volatile data storage and fast read/write operations.

Technical Specifications

Flash Memory MT35XU512ABA2G12-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

MT35XU512ABA2G12-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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