Loading...

MT35XU512ABA1G12-0AUT

Micron Technology

MT35XU512ABA1G12-0AUT by Micron Technology

Micron Technology's MT35XU512ABA1G12-0AUT is a 512Mx1 flash memory IC with 536,870,912-bit memory density. Operating at 166MHz clock frequency and 1.8V supply voltage, it is ideal for automotive applications due to AEC-Q100 screening level. The thin profile grid array package with bottom terminal position offers reliable performance in harsh environments.

Median Price

$16.250

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,149 parts In-Stock

1+ parts

$10.330

100+ parts

$8.490

1k+ parts

$8.340

10k+ parts

-

1,149

$10.330

$8.490

$8.340

-

Element14

Singapore . 222 parts In-Stock

1+ parts

$15.820

100+ parts

$13.480

1k+ parts

$13.060

10k+ parts

-

222

$15.820

$13.480

$13.060

-

Farnell

UK . 222 parts In-Stock

1+ parts

$16.250

100+ parts

-

1k+ parts

-

10k+ parts

-

222

$16.250

-

-

-

DigiKey

USA . 396 parts In-Stock

1+ parts

$18.870

100+ parts

$16.128

1k+ parts

$15.596

10k+ parts

-

396

$18.870

$16.128

$15.596

-

Newark

USA . 222 parts In-Stock

1+ parts

$25.620

100+ parts

-

1k+ parts

-

10k+ parts

-

222

$25.620

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 889 parts In-Stock

1+ parts

$10.488

100+ parts

-

1k+ parts

-

10k+ parts

-

889

$10.488

-

-

-

Vyrian

USA . 2,190 parts In-Stock

1+ parts

$11.040

100+ parts

-

1k+ parts

-

10k+ parts

-

2,190

$11.040

-

-

-

Chip Stock

USA . 23,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,400

-

-

-

-

Nova Conductors

Japan . 23 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$6.141

100+ parts

$5.588

1k+ parts

$5.036

10k+ parts

-

2,500

$6.141

$5.588

$5.036

-

Ampacity Inc.

Singapore . 282 parts In-Stock

1+ parts

$8.790

100+ parts

-

1k+ parts

-

10k+ parts

-

282

$8.790

-

-

-

Corphita

USA . 914 parts In-Stock

1+ parts

$9.936

100+ parts

-

1k+ parts

-

10k+ parts

-

914

$9.936

-

-

-

RC Electronics

USA . 1,811 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,811

-

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Upgrade your automotive electronics with the MT35XU512ABA1G12-0AUT from Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-quality flash memory solutions that are reliable and durable. This flash memory module is perfect for applications requiring high performance and efficiency. With a nominal supply voltage of 1.8V and operating temperature range from -40°C to 125°C, this product offers unmatched value, benefits, and advantages to customers looking for a trusted and innovative solution. Trust Micron Technology for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy package body material is durable and helps protect the internal components of the flash memory from external damage, making it a reliable choice.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal supply voltage of 1.8V helps in energy efficiency and low power consumption, making it suitable for use in portable devices.

Organization: 512MX1

The organization of 512MX1 allows for high memory density and efficient data storage capacity, making it suitable for storing large amounts of data.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this flash memory can withstand high temperature environments, making it suitable for automotive and industrial applications.

Technical Specifications

Flash Memory MT35XU512ABA1G12-0AUT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

MT35XU512ABA1G12-0AUT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20